Porous Intermediate Layer in Light Emitting Elements for Higher Extraction
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Solution Overview
Problem
Current light emitting elements face challenges in enhancing light emitting efficiency and flexibility in electrode material selection, limiting their performance and application in display devices.
Innovation Solution
A light emitting element design featuring a first and second semiconductor layer, an active layer, and an intermediate layer with a porous structure, where the intermediate layer includes doped layers with different dopant concentrations, optimized by specific thickness equations and refractive indices, enhancing light reflection and efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If a conventional light emitting element structure is used, then the structure is simple, but the light emitting efficiency is insufficient
Solution Approach 1:
The first semiconductor layer is divided into multiple sub-layers (first sub-layer, second sub-layer, third sub-layer) with different doping concentrations and compositions. This segmentation allows optimization of light emission at different depths and wavelengths, improving overall light emitting efficiency while managing structural complexity through functional division
Solution Approach 2:
The patent uses composite semiconductor structures combining different materials (e.g., InGaN, GaN, AlGaN) with varying compositions and doping levels. This composite approach enables tailored optical and electrical properties in each layer, enhancing light emitting efficiency by addressing specific performance requirements at different structural levels
2Adaptability or versatility
If electrode material selection is restricted, then the manufacturing process is simpler, but the adaptability and performance optimization are limited
Solution Approach 1:
The semiconductor layers are designed with universal compatibility for different electrode materials by optimizing the semiconductor composition and doping profiles. This allows the same semiconductor structure to work effectively with various electrode materials (e.g., transparent conductive oxides, metal electrodes), providing material selection freedom without requiring separate manufacturing processes for each electrode type
3Volume of moving object
If the semiconductor layer thickness is reduced, then the device size is smaller, but the light emitting efficiency decreases
Solution Approach 1:
Different regions of the semiconductor structure have optimized local properties: the first sub-layer has specific thickness and doping for efficient carrier injection, the second sub-layer has optimized composition for light emission, and the third sub-layer has tailored properties for light extraction. This local optimization allows reduced overall device size while maintaining high light emitting efficiency through enhanced performance in critical regions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed design improves light emitting efficiency and offers greater freedom in selecting electrode materials, leading to enhanced performance and versatility in display devices.
Implementation Method 1
The intermediate layer may reflect light emitted from the active layer in a direction from the first semiconductor layer toward the second semiconductor layer
Implementation Method 2
performing an electrochemical etching process on the intermediate layer to form a porous structure in the intermediate layer
Data Source
AI summary
A light emitting element includes a first semiconductor layer including a first type of semiconductor, the first semiconductor layer including a 1-1-th semiconductor layer and a 1-2-th semiconductor layer, which are arranged in a length direction of the light emitting element; a second semiconductor layer including a second type of semiconductor different from the first type; an active layer disposed between the 1-2-th semiconductor layer and the second semiconductor layer; and an intermediate layer disposed between the 1-1-th semiconductor layer and the 1-2-th semiconductor layer and having a porous structure.