Porous Passivation Contact Structure for Tunneling-Layer-Tolerant Solar Cells
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Solution Overview
Problem
The production of solar cells with conventional passivated IBC cells is limited by the precise control requirements for the thickness of the tunneling layer, which affects the conversion efficiency and scalability due to the trade-off between resistivity and passivation effects.
Innovation Solution
A doped region structure for solar cells is introduced, featuring a porous passivation layer with nano-level holes and doped layers, reducing the impact of tunneling layer thickness on resistance and enabling enhanced field passivation and impurity gettering, thereby improving conversion efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the thickness of the tunneling layer is strictly controlled to meet both resistivity and passivation requirements, then cell performance improves, but production scalability deteriorates
Solution Approach 1:
The contact structure is segmented into multiple functional layers with different thickness requirements. The tunneling layers can have greater thickness variations without affecting resistance, as the doped polysilicon layers provide the primary tunneling path. This relaxation of thickness control requirements significantly improves production scalability while maintaining high conversion efficiency.
Solution Approach 2:
The patent changes the structural parameters of the contact, introducing doped polysilicon layers with specific doping concentrations and thicknesses. This parameter change allows the system to tolerate larger variations in tunneling layer thickness, reducing the need for strict thickness control during production and enabling better scalability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The doped region structure reduces overall contact area and recombination, lowers resistance, and enhances conversion efficiency, addressing the limitations of conventional tunneling layer thickness control and improving production scalability.
Implementation Method 1
The passivation layer is a porous structure comprising a hole region, and the first doped layer and/or the second doped layer are disposed in the hole region
Implementation Method 2
enabling enhanced field passivation and impurity gettering, thereby improving conversion efficiency
Implementation Method 3
enabling enhanced field passivation and impurity gettering, thereby improving conversion efficiency
Implementation Method 4
By virtue of a photovoltaic effect of a semiconductor p-n junction, sunlight can be converted into electric energy
Data Source
AI summary
The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.