Porous Passivation Doped Regions for Scalable IBC Solar Cells
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Solution Overview
Problem
The production of solar cells with conventional passivated IBC cells is limited by the precise control requirements for the thickness of the tunneling layer, which affects the conversion efficiency and scalability due to the trade-off between resistivity and passivation effects.
Innovation Solution
A doped region structure in solar cells is introduced, featuring a porous passivation layer with nano-level holes and doped layers, reducing the impact of tunneling layer thickness on resistance and enabling enhanced field passivation and impurity gettering, thereby improving conversion efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the thickness of the tunneling layer is strictly controlled to meet precise requirements, then the cell performance improves, but the production scalability deteriorates
Solution Approach 1:
The single critical thickness parameter is segmented into two layers with different thickness ranges. This reduces the overall sensitivity to thickness variations and relaxes the precision requirements for each individual layer, making production more scalable
Solution Approach 2:
Instead of controlling a single tunneling layer thickness within a narrow range, the invention changes the parameter space by introducing two layers with different thickness specifications. This transforms one tight tolerance requirement into two more relaxed requirements, improving manufacturability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The doped region structure reduces overall contact area and recombination, allowing for more flexible preparation methods and increased conversion efficiency while addressing the challenges of precise thickness control in conventional tunneling layers.
Implementation Method 1
The passivation layer is a porous structure comprising a hole region, and the first doped layer and/or the second doped layer are disposed in the hole region
Implementation Method 2
enabling enhanced field passivation and impurity gettering
Implementation Method 3
enabling enhanced field passivation and impurity gettering
Implementation Method 4
By virtue of a photovoltaic effect of a semiconductor p-n junction, sunlight can be converted into electric energy
Data Source
AI summary
The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.