Porous Semiconductor Layer for Dye-Sensitized Solar Cells
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The existing methods for improving photoelectric conversion efficiency in dye-sensitized solar cells, such as using light scattering particles, do not sufficiently enhance efficiency and often result in a porous semiconductor layer that cracks during calcination.
Innovation Solution
A porous semiconductor layer is created using a combination of anatase-type titanium oxide particles with a large specific surface area and rutile-type titanium oxide particles coated with an insulating material, which improves photoelectric conversion efficiency while preventing cracking during manufacturing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If micro-sized oxide semiconductor particles are used to increase specific surface area for dye adsorption, then photoelectric conversion efficiency is improved, but electrical resistance increases due to increased contact points between particles
Solution Approach 1:
The patent changes the particle size parameter of oxide semiconductor particles to 10 nm to 50 nm, optimizing the balance between specific surface area and electrical resistance. This parameter optimization allows sufficient dye adsorption capacity while maintaining acceptable electrical conductivity for electron transport.
Solution Approach 2:
The patent creates a composite porous semiconductor layer by combining oxide semiconductor particles with light scattering particles. This composite structure achieves both high dye adsorption capacity through the oxide semiconductor particles and improved light harvesting through the light scattering particles, while the controlled particle size maintains electrical conductivity.
2Use of energy by moving object
If light scattering particles are added to increase actual optical path length, then photoelectric conversion efficiency should be improved, but the porous semiconductor layer cracks during calcination
Solution Approach 1:
The patent optimizes the particle size of oxide semiconductor particles to 10 nm to 50 nm, which provides sufficient mechanical strength to prevent cracking during calcination while maintaining high specific surface area for dye adsorption and enabling effective light scattering.
Solution Approach 2:
The patent creates a porous semiconductor layer with controlled porosity that accommodates light scattering particles and maintains structural integrity during calcination. The porous structure allows for effective light scattering while the controlled particle size and porosity prevent cracking during the heating process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves high photoelectric conversion efficiency and prevents cracking in the porous semiconductor layer, leading to improved performance and reliability in dye-sensitized solar cells.
Implementation Method 1
a porous semiconductor layer containing (A) anatase-type titanium oxide particles which have an average primary particle size of 1 nm to 70 nm, and (B) particles obtained by coating surfaces of rutile-type titanium oxide particles
Implementation Method 2
the porous semiconductor layer cracks at the time of calcination
Data Source
AI summary
A porous semiconductor layer contains anatase-type titanium oxide particles (A) which have an average primary particle size of 1 nm to 70 nm, and particles (B) obtained by coating surfaces of rutile-type titanium oxide particles, which have an average primary particle size of 100 nm to 1,000 nm, with an insulating material.