Positive Resist Composition for High-Resolution Lithography
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Solution Overview
Problem
Conventional resist compositions face challenges in maintaining pattern fidelity and resolution, especially when forming fine patterns with narrow pitches, leading to deviations in pattern size and potential collapse during the formation of features smaller than 100 nm, due to changes in light irradiation during the mask size alteration.
Innovation Solution
A positive resist composition is developed, comprising a base component with increased solubility in an alkali developing solution and an acid generator component that includes specific structural units, such as those represented by general formulas (a0-1) and (I), which enhance the resist pattern shape and lithography properties by improving acid generation and solubility control.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional resist compositions are used for forming fine patterns with narrow pitches, then lithography processes can be performed, but pattern fidelity deteriorates and resolution decreases due to pattern collapse and size deviations
Solution Approach 1:
The patent modifies the chemical parameters of the resist composition by incorporating specific base components with carboxyl groups and controlled solubility characteristics. These parameter changes enable the resist to maintain structural integrity during development while achieving precise pattern formation, directly addressing pattern fidelity and collapse resistance
Solution Approach 2:
The patent employs a composite resist system combining multiple components: base components (including polymers with carboxyl groups), solvents, and additives in specific ratios. This composite formulation creates a synergistic effect that enhances both pattern fidelity and resistance to collapse during the lithography process
2Adaptability or versatility
If mask size is altered to form different pattern dimensions, then design flexibility is achieved, but light irradiation changes cause deviations in pattern size
Solution Approach 1:
The patent utilizes adjustable exposure parameters and develops the resist with optimized alkali solutions to maintain consistent pattern dimensions across different mask sizes. The specific base component composition allows the resist to respond predictably to varying light irradiation, ensuring accurate pattern size control regardless of mask dimensions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed resist composition excels in resist pattern shape, particularly in terms of circularity for hole patterns and rectangularity for line patterns, while maintaining high resolution and uniformity, effectively addressing the issues of pattern fidelity and resolution.
Implementation Method 1
an acid generator component (B) which generates an acid upon exposure, wherein the base component (A) includes a structural unit (a0) represented by the general formula (a0-1) and a structural unit (a1) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group
Data Source
AI summary
A positive resist composition including: a base component (A) which includes a polymeric compound (A1) containing a structural unit (a0) represented by the general formula (a0-1) and a structural unit (a1) derived from an acrylate ester having an acid dissociable, dissolution inhibiting group; and an acid generator component (B) which includes an acid generator (B1) containing an anion moiety represented by the general formula (I):(in the formula (a0-1), R1 represents a hydrogen atom, a lower alkyl group of 1 to 5 carbon atoms or a halogenated lower alkyl group of 1 to 5 carbon atoms; R2 represents a bivalent linking group; and R3 represents a cyclic group containing —SO2— within the ring skeleton. In the formula (I), X represents a cyclic group of 3 to 30 carbon atoms, Q1 represents a bivalent linking group containing an oxygen atom; Y1 represents an alkylene group of 1 to 4 carbon atoms or a fluorinated alkylene group of 1 to 4 carbon atoms).