Positive Resist Composition for Nanometer Pattern Resolution
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Solution Overview
Problem
Conventional chemically amplified positive resist compositions face challenges in forming resist patterns with excellent resolution and shape, particularly at nanometer scales, due to thickness loss and rounding of top portions, which are critical for advanced lithography techniques like electron beam and EUV processes.
Innovation Solution
A positive resist composition incorporating a resin component with specific structural units and an acid generator having particular anion or cation moieties, which increases alkali solubility upon exposure, allowing for precise pattern formation with minimal thickness loss and improved shape retention.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional chemically amplified positive resist compositions are used, then the resist film can be formed with basic pattern definition, but the resist patterns exhibit thickness loss and rounding of top portions, resulting in poor resolution and shape at nanometer scales
Solution Approach 1:
The patent changes the chemical parameters of the resin component by introducing specific structural units (a1 from hydroxystyrene and a2 from formulas a2-1 or a2-2) that modify the resin's interaction with generated acid. This parameter change enables the resin to maintain thickness while allowing precise pattern formation, resolving the contradiction between thickness loss and resolution.
Solution Approach 2:
The patent creates a composite resist system combining the specifically structured resin component (A) with the acid generator component (B). This composite material approach allows the resin to provide mechanical integrity and shape retention while the acid generator enables precise chemical modification upon exposure, eliminating thickness loss and rounding defects.
2Length of moving object
If the wavelength of exposure light is shortened to achieve pattern miniaturization, then finer patterns can be formed, but the resist materials require higher resolution capabilities that conventional chemically amplified resins cannot provide
Solution Approach 1:
The patent modifies the chemical parameters of the resin to achieve superior resolution for short-wavelength lithography. The specific structural units (a1 and a2) are designed to respond precisely to acid generation from short-wavelength exposure, enabling the resist to maintain sharp pattern definitions at nanometer scales that conventional resins cannot achieve.
3Power
If acid generator components with strong acid-generating capability are used, then the chemically amplified effect is enhanced, but the resist patterns exhibit excessive thickness loss and shape degradation
Solution Approach 1:
The patent carefully adjusts the parameters of the resin component to balance the acid-generating capability. The specific structural units (a1 from hydroxystyrene and a2 from formulas a2-1 or a2-2) are designed to modulate the resin's response to acid, allowing sufficient chemical amplification for pattern formation while preventing excessive thickness loss and shape degradation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables the formation of resist patterns with excellent resolution and shape, minimizing surface roughness and thickness loss, thus enhancing the precision and utility of resist patterns in semiconductor and liquid crystal display manufacturing.
Implementation Method 1
an acid generator component (B) which generates acid upon exposure
Data Source
AI summary
A positive resist composition including a resin component (A) and an acid-generator component (B), the resin component (A) including a structural unit (a1) derived from hydroxystyrene, and a structural unit (a2) having an acetal-type acid dissociable dissolution inhibiting group, and the acid-generator component (B) including an acid generator (B1-i) having at least one anion moiety selected from the group consisting of anion moieties represented by general formula (b-3), (b-4), and (b-5), an acid generator (B1-ii) having an anion moiety represented by general formula (b-6) shown below, or an acid generator (B1-iii) having a cation moiety represented by general formula (b′-3) shown below:wherein X″ represents an alkylene group of 2 to 6 carbon atoms in which at least one hydrogen atom has been substituted with a fluorine atom; Y″ and Z″, U″, V″, and W″ each independently represents an alkyl group of 1 to 10 carbon atoms in which at least one hydrogen atom has been substituted with a fluorine atom,[Chemical Formula 2]R10″—SO3− (b-6)wherein R10″ represents a hydrocarbon group which may or may not have a substituent,wherein R7″ to R9″ each independently represents a phenyl group or naphthyl group that may or may not have a substituent; with the proviso that the case where all of R7″ to R9″ represent phenyl groups which do not have a substituent is excluded.