Positive Resist Composition for High-Resolution Low-LWR Patterning
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing positive resist compositions face challenges in achieving high resolution with low edge roughness and small size variation due to acid diffusion and alkaline developer swell, which affect the formation of fine patterns in microelectronic devices.
Innovation Solution
Incorporating a base polymer with repeat units having two triple bonds and repeat units with carboxy or phenolic hydroxy groups substituted by acid labile groups to minimize acid diffusion and enhance alkaline dissolution, resulting in a positive resist composition with improved resolution, reduced edge roughness, and uniform pattern formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If acid diffusion is suppressed to improve resolution, then manufacturing precision improves, but sensitivity deteriorates
Solution Approach 1:
The patent changes the chemical parameters of the acid generator by selecting specific sulfonium salts and iodonium salts with defined molecular structures and properties. This allows control over acid diffusion characteristics while maintaining sufficient sensitivity for pattern formation, resolving the contradiction between resolution and sensitivity
Solution Approach 2:
The patent uses composite resist compositions combining multiple polymers (polymer A and polymer B) with specific functional groups, along with selected acid generators. This composite approach enables simultaneous optimization of acid diffusion control and dissolution sensitivity that cannot be achieved with single-component systems
2Manufacturing precision
If post-exposure bake temperature and time are reduced to minimize acid diffusion, then manufacturing precision improves, but sensitivity and contrast deteriorate
Solution Approach 1:
The patent modifies the PEB parameters (temperature and time) to optimized ranges that balance acid diffusion control with adequate sensitivity and contrast. By carefully selecting PEB conditions specific to the resist composition, the patent achieves fine pattern formation without excessive acid diffusion or insufficient dissolution
Solution Approach 2:
The patent creates local chemical environments within the resist film through specific polymer-functional group combinations that facilitate controlled acid diffusion in the exposed regions while maintaining overall pattern fidelity, allowing optimized PEB processing
3Productivity
If feature size is reduced to achieve higher integration density, then productivity improves, but manufacturing precision deteriorates due to image blurring
Solution Approach 1:
The patent adjusts critical process parameters including PEB temperature, time, and chemical composition to enable successful patterning at reduced feature sizes. These parameter optimizations allow the resist to maintain adequate contrast and resolution even as pattern dimensions decrease for higher integration density
Solution Approach 2:
The patent uses photomask patterns as templates to copy circuit designs onto the resist film at scaled dimensions. The optimized resist composition enables faithful reproduction of these patterns at reduced sizes, achieving high integration density while maintaining manufacturing precision
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves high resolution, low edge roughness, and improved dimensional uniformity, making it suitable for micropatterning in semiconductor circuits, photomasks, and other microdevices.
Implementation Method 1
image blurs due to acid diffusion become a problem
Implementation Method 2
enhance alkaline dissolution
Data Source
AI summary
A positive resist composition is provided comprising a base polymer comprising repeat units (a) having two triple bonds and repeat units (b) adapted to increase solubility in an alkaline developer under the action of acid. A pattern of good profile with a high resolution, reduced LWR, and improved CDU is formed therefrom.