Positive Tone Resist Composition for Ultrafine Pattern Formation
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Solution Overview
Problem
Conventional positive tone pattern forming methods using chemically amplified resist compositions face challenges in achieving high sensitivity, resolution, line width roughness (LWR) performance, and local pattern dimension uniformity (Local-CDU) for ultrafine patterns, particularly for line and space patterns with line widths of 20 nm or less and contact hole patterns with pore sizes of 30 nm or less.
Innovation Solution
A positive tone pattern forming method involving a resin composition with a repeating unit capable of forming polar interactions, a compound generating an acid or base upon irradiation, and a solvent, where the solubility in an organic solvent is increased by exposure, allowing for development using an organic solvent-based developer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional chemically amplified resist composition is used, then pattern formation is achieved, but sensitivity, resolution, LWR performance, and Local-CDU performance are insufficient for ultrafine patterns
Solution Approach 1:
The patent changes the chemical parameters of the resist composition by introducing specific repeating units with polar groups that can form polar interactions. This chemical modification enables the resist to achieve both high pattern formation quality and high sensitivity/resolution for ultrafine patterns, resolving the contradiction between manufacturing precision and measurement precision.
Solution Approach 2:
The patent creates a composite resist composition containing multiple functional components: repeating units with polar groups, basic compounds, and photoacid generators. This composite structure combines the benefits of polar interactions for high resolution with chemical amplification for sensitivity, simultaneously achieving excellent LWR and Local-CDU performance.
2Ease of manufacture
If aqueous alkaline developer is used, then development is achieved, but performance for ultrafine patterns is insufficient
Solution Approach 1:
The patent changes the developer type from aqueous alkaline to organic solvent-based. This parameter change in the development system, combined with the modified resist composition, enables superior ultrafine pattern quality while maintaining ease of manufacture through a simplified development process.
3Manufacturing precision
If acid diffusion mechanism is used, then pattern formation is achieved, but LWR performance and Local-CDU performance deteriorate
Solution Approach 1:
The patent extracts or eliminates the acid diffusion mechanism from the pattern formation process. By using a resist composition with basic compounds that neutralize photoacid immediately upon generation, the patent prevents acid diffusion, thereby achieving excellent LWR and Local-CDU performance while maintaining good pattern formation.
Solution Approach 2:
The patent introduces basic compounds as intermediaries that mediate between the photoacid generator and the polymer chains. These basic compounds neutralize the photoacid locally, preventing diffusion and maintaining composition stability, thus improving LWR and Local-CDU performance.
Data Source
AI summary
Provided are a positive tone pattern forming method in which development is carried out using a developer containing an organic solvent with use of a composition containing (A) a resin which has a repeating unit containing a moiety capable of forming a polar interaction and whose polarity is decreased due to release of the polar interaction by the action of an acid or a base, or a composition containing (A′) a resin having a repeating unit containing a polar group and (B) a compound capable of forming a polar interaction with the polar group of the resin (A′); and an electronic device manufacturing method including such a pattern forming method.