Polyhedral Oligomeric Silsesquioxane Resist Composition for Fine Pattern Formation
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Solution Overview
Problem
In the manufacturing of semiconductor and liquid crystal display elements, existing resist materials face challenges in achieving both high etching resistance and fine pattern resolution, particularly with the increasing demand for patterns of several tens of nanometers, where pattern roughness and lithography characteristics are difficult to achieve simultaneously.
Innovation Solution
A film-forming composition incorporating a silicon-containing compound, specifically a polyhedral oligomeric silsesquioxane, combined with an acid generating agent and a crosslinking agent, which forms a resist pattern upon light exposure, reducing pattern roughness and enhancing etching resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If a silicon-containing compound is used as a base material component to improve etching resistance, then etching resistance is enhanced, but pattern roughness increases
Solution Approach 1:
The patent uses a composite material system consisting of polyhedral oligomeric silsesquioxane (POSS) combined with organic resin components. The POSS cage structure provides etching resistance while the organic resin matrix controls pattern formation and reduces roughness. This composite approach allows simultaneous achievement of high etching resistance and smooth pattern surfaces.
Solution Approach 2:
The patent modifies the chemical structure parameters of the silicon-containing compound by using specific polyhedral oligomeric silsesquioxane structures with controlled cage configurations and substituent groups. By adjusting the molecular weight, cage structure, and functional group composition of the POSS, the patent optimizes both etching resistance and pattern roughness characteristics.
2Manufacturing precision
If the wavelength of exposure light source is shortened to achieve fine pattern resolution, then lithography resolution is improved, but lithography characteristics become difficult to achieve
Solution Approach 1:
The patent changes the chemical composition parameters of the resist material to match the shortened wavelength exposure light sources. By incorporating polyhedral oligomeric silsesquoxane with specific functional groups and adjusting the molecular structure, the patent enhances sensitivity to extreme ultraviolet light while maintaining pattern formation characteristics, enabling effective lithography at reduced wavelengths.
Solution Approach 2:
The patent creates a composite resist system combining polyhedral oligomeric silsesquoxane with organic resin components that are specifically designed to work together under short-wavelength exposure. This composite structure provides both the sensitivity needed for fine pattern formation and the lithography characteristics required for reliable pattern reproduction at extreme ultraviolet wavelengths.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition effectively reduces pattern roughness and improves lithography characteristics, enabling the formation of fine patterns with high etching resistance suitable for extreme ultraviolet lithography, overcoming the limitations of traditional resist materials.
Implementation Method 1
a chemically amplified resist composition containing a base material component whose solubility in a developing solution is changed due to an action of an acid and an acid generating agent component that generates an acid upon light exposure
Data Source
AI summary
A film-forming composition including a polyhedral oligomeric silsesquioxane represented by General Formula (a1), an acid generating agent component, and a crosslinking agent component. In Formula (a1), R1 to R8 represent an aromatic group containing a phenolic hydroxyl group, a hydrocarbon group having 1 to 10 carbon atoms, or a hydrogen atom; at least one of R1 to R8 represents an aromatic group containing a phenolic hydroxyl group; L1 to L8 represent a specific divalent linking group at least one of L1 to L8 represents a divalent linking group represented by General Formula (a1-L-2) or General Formula (a1-L-3), ZX and ZY represent a hydrocarbon group having 1 to 6 carbon atoms or a hydrogen atom, and n2 and n3 represent an integer of 0 to 10).