Two-Stage Post Driver Circuit for Transistor Voltage Stress Control

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Solution Overview

Problem

Conventional two-stage post driver circuits face transistor damage due to excessive voltage differences between drain and source voltages during level transitions, leading to potential circuit failure.

Innovation Solution

The proposed two-stage post driver circuit incorporates a controlling circuit that generates transient and steady-state pull-up and pull-down signals, ensuring that the voltage difference across transistors remains within safe limits by using a first P-type transistor connected to a second P-type transistor and a first N-type transistor connected to a second N-type transistor, with the controlling circuit adjusting signal timing to maintain balanced voltage levels during transitions.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a two-stage post driver circuit is used to generate higher output voltage (3.3V) from core voltage (1.8V), then the output pad can withstand the required voltage stress, but the transistors may be damaged due to excessive voltage difference between drain and source during level transitions

Engineering Contradiction:
Improvetransistor reliabilityVSAvoidvoltage stress on transistors
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The controlling circuit generates pull-up and pull-down controlling signals in advance to ensure that transistors are properly biased before voltage transitions occur. The first pull-up controlling signal is generated before the pad output signal transitions to high level, and the first pull-down controlling signal is generated before the transition to low level, preventing excessive voltage differences across transistor terminals

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The controlling circuit acts as an intermediary between the pad output signal and the transistor gates. It receives the pad output signal and generates appropriate controlling signals that mediate the voltage transitions, ensuring that transistors switch at the right moments and avoiding direct exposure to harmful voltage differences

Inventive Principle:
Principle #24Intermediary (Mediator)

2Device complexity

If transistors are directly connected in the post driver circuit to handle voltage transitions, then the circuit structure remains simple, but the transistors are exposed to excessive voltage differences that can cause damage

Engineering Contradiction:
Improvecircuit structure complexityVSAvoidtransistor protection
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The controlling circuit serves as an intermediary layer between the simple transistor structure and the voltage transitions. This adds minimal complexity while providing essential protection by generating timing-controlled signals that prevent harmful voltage differences across the transistor terminals

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The controlling circuit changes the timing parameters of the controlling signals relative to the pad output signal. By adjusting when the pull-up and pull-down controlling signals are generated, the circuit modifies the operational parameters of transistors to avoid harmful voltage conditions while maintaining structural simplicity

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS8933730B2Two-stage post driver circuit
Publication Date: 2015.01.13 GLOBAL UNICHIP CORPORATION
  • US8933730B2 patent drawing
  • US8933730B2 patent drawing
  • US8933730B2 patent drawing

AI summary

A two-stage post driver circuit includes a controlling circuit, a pull-up unit and a pull-down unit. A first N-type transistor of the pull-down unit and a first P-type transistor of the pull-up unit are both connected to an output pad. The controlling circuit is used for controlling the first N-type transistor and the first P-type transistor. Consequently, when the pull-up unit or the pull-down unit is turned on, the voltage difference between the drain terminal and the source terminal of the first N-type transistor or the first P-type transistor is lower than a voltage stress.