Post-Integration OPC Model for Via Bridging Prevention
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Solution Overview
Problem
Current semiconductor device manufacturing methods face challenges in ensuring accurate patterning and reliability due to issues like via-to-metal line bridging and pinching, particularly when dealing with sloped or non-self-aligned sidewalls and adjacent metal structures, which can lead to yield and reliability concerns.
Innovation Solution
A model-based optical proximity correction (OPC) method is introduced, incorporating post-integration constraints and using high-resolution scanning electron microscopy data to create and verify OPC models, thereby avoiding encroachment on lower metal layers and improving edge placement accuracy through optical rule checking (ORC).
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional OPC methodologies are used without post-integration constraints, then the patterning process is simpler and faster, but the risk of via-to-metal line bridging and pinching increases
Solution Approach 1:
The patent applies preliminary action by incorporating post-integration constraints into the OPC model development phase. The methodology pre-evaluates potential bridging and pinching issues by simulating the final integrated structure's contour, allowing corrections to be made before actual fabrication. This prevents yield losses that would occur if these issues were detected only after manufacturing.
Solution Approach 2:
The patent introduces an intermediary verification step between conventional OPC and final fabrication. A post-integration OPC model acts as a mediator that translates pre-integration OPC results into predictions of post-integration structure contours, enabling detection of potential failures without requiring physical prototyping of each structure.
2Manufacturing precision
If additional post-integration constraints are added to OPC methodology, then edge placement accuracy improves, but processing time and computational complexity increase
Solution Approach 1:
The patent performs preliminary computational work by developing the post-integration OPC model once, which can then be reused for verifying multiple OPC rule sets. The model captures the relationship between pre-integration and post-integration contours, allowing rapid evaluation of different OPC approaches without repeating full post-integration simulations each time.
Solution Approach 2:
The patent creates a simplified computational copy of the post-integration structure contour through the OPC model. Instead of performing computationally intensive full post-integration simulations for every verification, the method uses the pre-developed model to predict contours, significantly reducing processing time while maintaining accuracy.
3Measurement precision
If conventional OPC verification methods are used, then the verification process is faster, but the detection of weak points and potential failures is less accurate
Solution Approach 1:
The patent introduces an intermediary verification layer that bridges conventional OPC and final structure assessment. The post-integration OPC model serves as a mediator that translates standard OPC outputs into predictions of actual post-integration contours, enabling accurate weak point detection without requiring physical inspection of every potential failure point.
Solution Approach 2:
The patent replaces physical measurement and inspection methods with computational modeling. Instead of using expensive and time-consuming physical prototyping or post-fabrication inspection to detect weak points, the methodology uses the post-integration OPC model to computationally predict and identify potential failures before fabrication occurs.
Data Source
AI summary
A method of creating an optical proximity correction (OPC) model and assessing the model through optical rule checking (ORC) includes the introduction of post-integration, i.e., post-metallization data. High density critical dimension scanning electron microscopy and backscattered electron scanning electron microscopy from a metallized structure are used during development and verification of the model to accurately predict post-integration behavior.