Post-Polish Semiconductor Cleaning Composition for Corrosion Control
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Solution Overview
Problem
Existing cleaning solutions used after metal film polishing in semiconductor manufacturing are ineffective in removing metal contaminants and organic contaminants, and can cause corrosion of metal wiring, leading to decreased reliability and quality of semiconductor devices.
Innovation Solution
A cleaning solution composition containing a chelating agent with amino acid, a pH adjuster with a quaternary ammonium compound, an etchant with an amine compound, and an inhibitor with pyridinecarboxylic acid, which does not include azole compounds, is used to effectively remove metal and organic contaminants while preventing corrosion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If an alkaline aqueous cleaning solution rich in OH is used, then abrasive particles can be easily removed through electrical repulsion, but metal contaminants and organic contaminants cannot be effectively removed
Solution Approach 1:
The patent changes the chemical parameters of the cleaning solution by incorporating specific compounds (azole compounds as corrosion inhibitors, chelating agents for metal contaminants, and organic solvents for organic contaminants) while maintaining alkaline pH. This multi-component formulation addresses multiple contamination types simultaneously without compromising abrasive particle removal.
Solution Approach 2:
The cleaning solution uses a composite formulation combining multiple functional ingredients: alkaline agents for abrasive removal, chelating agents for metal contaminants, organic solvents for organic contaminants, and azole compounds as corrosion inhibitors. This composite approach enables simultaneous effectiveness against different contaminant types.
2Reliability
If a cleaning solution is used to remove contaminants, then cleaning effectiveness is improved, but corrosion of metal wiring materials occurs
Solution Approach 1:
The patent converts the potentially harmful alkaline environment into a beneficial cleaning agent by adding corrosion inhibitors (azole compounds) that protect metal wiring. The alkaline solution effectively removes contaminants while the azole compounds prevent corrosion, transforming a harmful effect into a controlled and beneficial process.
Solution Approach 2:
The azole compounds act as intermediary substances between the alkaline cleaning solution and the metal wiring materials. They form protective complexes with metal ions, preventing direct contact between the corrosive alkaline environment and the metal wiring, thus mediating the interaction to prevent corrosion while maintaining cleaning effectiveness.
3Object-affected harmful factors
If an azole compound containing cleaning solution is used, then corrosion protection is provided, but the azole compound remains on the wafer surface and acts as an organic defect
Solution Approach 1:
The patent optimizes the concentration and type of azole compounds used, balancing corrosion protection with ease of removal. By controlling the chemical parameters (concentration, molecular structure), the solution achieves adequate corrosion inhibition while the remaining azole residue can be effectively removed in subsequent processing steps, preventing organic defects.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively removes metal and organic contaminants without causing corrosion, thereby enhancing the reliability and quality of semiconductor devices by minimizing defects and ensuring proper functioning of metal wiring.
Implementation Method 1
a cleaning solution composition containing a chelating agent containing amino acid
Implementation Method 2
an etchant containing an amine compound
Implementation Method 3
an inhibitor containing pyridinecarboxylic acid
Data Source
AI summary
Provided is a cleaning solution composition containing a chelating agent containing amino acid, a pH adjuster containing a quaternary ammonium compound, an etchant containing an amine compound, and an inhibitor containing pyridinecarboxylic acid, wherein the cleaning solution composition does not contain an azole compound.

