Power Amplifier Transistor Uniformity via Coupled Inductors

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Solution Overview

Problem

In power amplifier apparatuses with cascode-connected multi-finger transistors, variations in potential difference or phase difference between transistors lead to non-uniform operations due to the placement of terminals and capacitors on the same substrate, which existing configurations fail to adequately address.

Innovation Solution

A power amplifier apparatus configuration where first and second transistors are arranged in specific directions with collector and emitter terminals disposed adjacent to each other, utilizing inductors and capacitors to ensure uniform operation by complementing inductance values and reducing phase variations, with inductors performing a choke function to stabilize the signal.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of stationary object

If a plurality of multi-finger transistors are cascode-connected via a capacitor with terminals disposed on the same substrate, then the device integration is improved, but variations in potential difference or phase difference between transistors occur causing non-uniform operations

Engineering Contradiction:
Improvesubstrate area utilizationVSAvoidtransistor operation uniformity
Core Design Contradiction:
Area of stationary objectVSReliability

Solution Approach 1:

The patent transitions from a two-dimensional planar arrangement of terminals to a three-dimensional stacked configuration where collector terminals and emitter terminals are positioned at different vertical levels (different layers) on the substrate. This vertical stacking allows terminals to be disposed close to each other in the vertical dimension while maintaining proper electrical connections, thereby reducing phase and potential differences without compromising substrate area utilization.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent introduces intermediate connection structures (such as via holes and conductive layers) that mediate the electrical connection between collector terminals and emitter terminals positioned at different locations and layers. These intermediaries enable precise control of signal paths and reduce variations in potential difference and phase difference between transistors while maintaining the integrated layout.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If collector terminals and emitter terminals are disposed close to each other with coupled inductors, then variations in transistor operations are reduced, but the device complexity increases

Engineering Contradiction:
Improvetransistor operation uniformityVSAvoidinductor coupling structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent merges the functions of multiple inductors by coupling them together such that they collectively perform the choke function. Instead of requiring separate, precisely matched inductors for each transistor, the design combines inductors into an integrated structure where the total inductance provides the necessary impedance, simplifying the overall device structure while reducing variations in transistor operations.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The coupled inductor structure serves multiple functions simultaneously: it provides impedance matching, acts as a choke to block high-frequency signals, and compensates for variations between transistors. This multi-functionality reduces the need for additional separate components, thereby managing device complexity while improving operation uniformity.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration reduces variations in transistor operations, increases the amplitude of the output signal, and improves power-added efficiency by maintaining uniform power supply and reducing impedance transformation ratios in the matching circuit.

Implementation Method 1

a first inductor having a first end electrically connected to the at least one collector terminal and a second end electrically connected to a power supply potential; at least one emitter terminal electrically connected to emitters of the plurality of second transistors... a second inductor having a first end electrically connected to the at least one emitter terminal and a second end electrically connected to a reference potential

Methodology Applied
Scientific EffectInductance: Inductor

Implementation Method 2

at least one capacitor having a first end electrically connected to the collectors of the plurality of first transistors and a second end electrically connected to the emitters of the plurality of second transistors

Methodology Applied
Scientific EffectCapacitance: Capacitance

Data Source

PatentUS11616479B2Power amplifier apparatus
Publication Date: 2023.03.28 MURATA MFG CO LTD
  • US11616479B2 patent drawing
  • US11616479B2 patent drawing
  • US11616479B2 patent drawing

AI summary

A power amplifier apparatus includes a semiconductor substrate, a plurality of first transistors on the semiconductor substrate, a plurality of second transistors, at least one collector terminal electrically connected to collectors of the plurality of first transistors, a first inductor having a first end electrically connected to the collector terminal and a second end electrically connected to a power supply potential, at least one emitter terminal electrically connected to emitters of the plurality of second transistors and adjacent to the collector terminal in a second direction, a second inductor having a first end electrically connected to the emitter terminal and a second end electrically connected to a reference potential, and at least one capacitor having a first end electrically connected to the collectors of the plurality of first transistors and a second end electrically connected to the emitters of the plurality of second transistors.