Power Amplifier Bias Circuit With Dual Feedback Bandwidth Control

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Solution Overview

Problem

Existing power amplifiers face challenges in achieving both a wider frequency band and higher precision for bias circuits, as existing techniques either result in insufficient performance with narrow loop bands or reduced precision with wider loop bands due to constant Gain Bandwidth product (GB product) characteristics.

Innovation Solution

A power amplifier design incorporating a bias circuit with a first bias detection circuit, an error amplifier circuit, and a bias output buffer circuit, including a comparator and p-type transistors, which utilizes both low-speed and high-speed feedback paths to maintain low output impedance across a wide frequency range, combining high precision and wide band capabilities.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If the feedback speed of the bias circuit is increased to achieve a wider loop band, then the frequency band coverage is improved, but the loop gain decreases and precision is reduced

Engineering Contradiction:
Improveloop band widthVSAvoidbias circuit precision
Core Design Contradiction:
Adaptability or versatilityVSMeasurement precision

Solution Approach 1:

The bias circuit is segmented into two parallel feedback paths: a first feedback path with high loop gain for precision, and a second feedback path with extended bandwidth. This segmentation allows each path to optimize for its specific function while working together to achieve both precision and wide band coverage.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The circuit dynamically switches between or combines different feedback paths depending on frequency requirements. The first bias detection circuit operates effectively in a first frequency band with high precision, while the second bias detection circuit extends coverage to a second frequency band, creating a dynamic system that adapts to different frequency demands.

Inventive Principle:
Principle #15Dynamics

2Adaptability or versatility

If a single feedback path is used in the bias circuit, then the circuit structure is simple, but it cannot simultaneously achieve wide band coverage and high precision

Engineering Contradiction:
Improvefrequency band coverageVSAvoidbias circuit structure
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The bias circuit is divided into functional segments: a first bias detection circuit for precision in a first frequency band, a second bias detection circuit for extended coverage in a second frequency band, and separate feedback paths for each. This segmentation enables wide band coverage and high precision while keeping each segment's complexity manageable.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The bias circuit is designed with multi-functionality to handle different frequency bands and precision requirements through a unified structure. The first and second feedback paths work together to provide both precision and wide band coverage, making the circuit universally applicable across multiple frequency ranges.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS20240204736A1Power amplifier
Publication Date: 2024.06.20 MURATA MFG CO LTD
  • US20240204736A1 patent drawing
  • US20240204736A1 patent drawing
  • US20240204736A1 patent drawing

AI summary

A power amplifier includes a first transistor and a bias circuit, in which the bias circuit includes a first bias detection circuit, an error amplifier circuit, a bias output buffer circuit, and a second bias detection circuit, the error amplifier circuit includes a comparator, the bias output buffer circuit includes a second transistor, a first node, and a second node, the first bias detection circuit is connected between a drain of the first transistor and the comparator, the second transistor is connected between the comparator and the first node, the first node is connected between the second transistor and the second node and between the transistor and the second bias detection circuit, the second node is connected between the first node and a gate of the first transistor, and the second bias detection circuit is connected between the first node and the second node.