Power Cell Synthesizer Optimizing On-Resistance and Layout Area
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current power cell design methodologies for ICs face challenges in achieving low on-resistance (RDSon) values efficiently, often leading to overdesign, increased costs, and longer design times due to the complexity of optimizing both intrinsic transistor and metal interconnect resistances, which are typically addressed through iterative and resource-intensive processes.
Innovation Solution
The development of a compact analytical method and apparatus that employs a G-function processor to optimize geometric layout parameters, predicting and minimizing RDSon by accurately modeling the effects of parasitic metal resistance and its variability with device layout, allowing for a closed-form solution to find the global minimum in a continuous solution space.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the gate width is increased to decrease intrinsic transistor resistance, then the on-resistance decreases, but the device area increases
Solution Approach 1:
The power cell is divided into multiple unit cells, each with its own intrinsic transistor and metal interconnect structure. This segmentation allows the total on-resistance to be distributed across parallel paths, reducing the overall resistance without proportionally increasing the area of each individual unit cell. The segmented approach enables independent optimization of each unit while achieving system-level performance targets.
2Manufacturing precision
If the cell area is increased to decrease intrinsic transistor resistance, then the on-resistance decreases, but the metal interconnect resistance increases
Solution Approach 1:
The metal interconnect structure is optimized with non-uniform geometry, where the interconnect width varies along its length to compensate for resistance effects. The interconnect is wider at regions where current density is higher and narrower where current density is lower. This local quality variation allows the metal interconnect resistance to be minimized while maintaining a compact cell area, directly addressing the contradiction between area reduction and resistance management.
3Manufacturing precision
If traditional iterative design methods are used to optimize power cell parameters, then design accuracy can be improved, but design time and computational resources increase
Solution Approach 1:
Closed-form analytical expressions are derived beforehand that directly calculate the optimal power cell parameters (gate width, interconnect dimensions, unit cell count) based on target on-resistance specifications. These pre-derived formulas eliminate the need for iterative simulation and adjustment during the design process. The designer simply inputs the target RDSon value and device voltage rating, and the analytical model immediately provides the optimized geometric parameters, dramatically reducing design time while maintaining high accuracy.
Data Source
AI summary
Apparatus for providing semiconductor device with an analysis module to receive device information, a G-function processor producing an ordered relationship representation corresponding to an optimization parameter specification, and a power cell optimizer to produce an optimization parameter from the ordered relationship representation. A method for designing a semiconductor device includes receiving an optimization target specification; receiving an optimization parameter specification corresponding to an optimization parameter; receiving the target parameter; receiving a G-function corresponding to an ordered relationship representation; optimizing the optimization parameter specification as a function of the predetermined G-function; and producing at least one optimized geometric layout parameter (GLP) by the optimizing, wherein the at least one GLP corresponds to an optimized power cell.


