Integrated Power Supply Circuit for Temperature-Based Voltage Control
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Solution Overview
Problem
Existing power supply circuits in chip design are complex due to the need for separate detection circuits to control output voltage based on transistor characteristics and temperature, complicating circuit structures and hindering the reduction of chip volume.
Innovation Solution
A power supply circuit that integrates a constant current generation circuit to produce currents with positive and negative temperature coefficients, generating a temperature-dependent voltage using transistors, thereby simplifying the design by combining detection and power supply functions into a single circuit.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a separate detection circuit is designed to control output voltage based on transistor characteristics and temperature, then the output voltage control is achieved, but the circuit structure becomes complicated
Solution Approach 1:
The patent combines the detection circuit and power supply circuit into a single integrated circuit. The detection unit detects transistor characteristics and temperature, while the power supply unit generates output voltage based on these detections, all within one circuit structure. This merging eliminates the need for separate detection and power supply circuits, reducing overall circuit complexity while maintaining reliable output voltage control.
2Measurement precision
If separate detection and control circuits are used, then accurate temperature and transistor characteristic detection is achieved, but chip volume increases
Solution Approach 1:
The detection unit and power supply unit are integrated into a single circuit structure on the chip. The detection unit detects transistor characteristics and temperature, and this information is directly used by the power supply unit to adjust output voltage, all within the same chip area. This integration significantly reduces chip volume compared to having separate detection and control circuits.
Solution Approach 2:
The integrated circuit performs multiple functions: detecting transistor characteristics, detecting temperature, and generating controlled output voltage, all within a single circuit structure. This multi-functionality reduces the overall chip area required compared to implementing these functions in separate circuits.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the complexity of control circuits and minimizes chip volume by directly integrating detection and power supply functions, enhancing control efficiency and optimizing chip design.
Implementation Method 1
The constant current generation circuit is configured to generate a first current with a positive temperature coefficient and a second current with a negative temperature coefficient, and generate a constant current according to the first current and the second current
Implementation Method 2
The voltage generation circuit includes a transistor, which is coupled to the constant current generation circuit, and configured to generate a temperature-dependent voltage according to the constant current and characteristics of the transistor
Data Source
AI summary
A power supply circuit and a chip to which the power supply circuit is applied are disclosed. The power supply circuit includes a constant current generation circuit and a voltage generation circuit. The constant current generation circuit is configured to generate a first current with a positive temperature coefficient and a second current with a negative temperature coefficient, and generate a constant current according to the first current and the second current. The voltage generation circuit includes a transistor, is coupled to the constant current generation circuit, and configured to generate a temperature-dependent voltage according to the constant current and characteristics of the transistor.