Power Control Circuit for Semiconductor Devices

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Solution Overview

Problem

Current power supply circuits in semiconductor devices, such as DRAM, lack flexibility in adjusting current supply capacity to match varying performance requirements, leading to inefficient power management and increased current consumption.

Innovation Solution

The implementation of parallel-connected MOS transistors in the power control circuit, which are activated or deactivated based on selection signals to adjust the current supply capacity, allowing for multiple operation modes (high current or reduced current) by varying the number of transistors turned on, thereby optimizing power distribution.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If a fixed current supply capacity is used in the power supply circuit, then the circuit structure is simple, but the adaptability to varying performance requirements is poor and power management efficiency is reduced

Engineering Contradiction:
Improveadaptability to varying performance requirementsVSAvoidcircuit structure complexity
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The power supply circuit is segmented into multiple parallel-connected MOS transistors (first MOS transistor and second MOS transistor) with independent gate electrodes. This segmentation allows the total current supply capacity to be adjusted by selectively activating different numbers of transistors, thereby adapting to varying performance requirements while maintaining a relatively simple overall circuit structure.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The power supply circuit transitions from a fixed current supply configuration to a dynamic configuration where the current supply capacity can be adjusted in real-time. By controlling the gate electrodes of the MOS transistors through selection signals, the circuit can dynamically change its current supply capacity to match varying performance requirements, improving adaptability without significantly increasing complexity.

Inventive Principle:
Principle #15Dynamics

2Adaptability or versatility

If multiple parallel-connected MOS transistors are used to adjust current supply capacity, then the adaptability to performance requirements is improved, but the device complexity increases

Engineering Contradiction:
Improvecurrent supply capacity adjustment capabilityVSAvoidpower control circuit complexity
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The power supply circuit is divided into multiple identical parallel-connected MOS transistor units, each with its own gate electrode. This segmentation enables independent control of each transistor's on/off state, allowing flexible adjustment of total current supply capacity while keeping each individual unit simple and standardized.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Each MOS transistor in the parallel configuration serves multiple functions: it contributes to the total current supply capacity when activated, and its gate electrode serves as a control element for adjusting the overall current supply. This multi-functionality reduces the need for separate control circuits, thereby limiting the increase in device complexity despite having multiple transistors.

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Power

If all MOS transistors are always turned on, then the current supply capacity is maximized, but the power consumption increases during low-demand periods

Engineering Contradiction:
Improvecurrent supply capacityVSAvoidpower consumption during low-demand periods
Core Design Contradiction:
PowerVSLoss of energy

Solution Approach 1:

The power supply circuit dynamically adjusts its current supply capacity by selectively turning on or off MOS transistors based on actual demand. During high-demand periods, more transistors are activated to maximize current supply capacity. During low-demand periods, fewer transistors are activated, reducing power consumption while maintaining sufficient current supply capacity for the actual workload.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The circuit changes its operating parameters (current supply capacity) by varying the number of active MOS transistors. This parameter adjustment allows the system to match its power output to actual demand, maximizing current supply capacity when needed while minimizing power consumption during low-demand periods through selective transistor activation.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables dynamic adjustment of current supply capacity, reducing power consumption and enhancing performance by allowing for high current operation when needed and minimizing current consumption during low-demand periods, thus optimizing energy efficiency.

Implementation Method 1

parallel-connected MOS transistors in the power control circuit, which are activated or deactivated based on selection signals to adjust the current supply capacity

Methodology Applied
Scientific EffectMOS transistor switching:

Data Source

PatentUS11948620B2Semiconductor device having power control circuit
Publication Date: 2024.04.02 MICRON TECHNOLOGY INC
  • US11948620B2 patent drawing
  • US11948620B2 patent drawing
  • US11948620B2 patent drawing

AI summary

Disclosed herein is an apparatus that includes: a semiconductor substrate including first and second source regions coupled to a first power supply line and first and second drain regions coupled to a second power supply line, the first drain region being arranged between the first and second source regions, the second source region being arranged between the first and second drain regions; and gate electrodes including a first gate electrode arranged between the first source region and the first drain region, a second gate electrode arranged between the first drain region and the second source region, and a third gate electrode arranged between the second source region and the second drain region. The first and third gate electrodes are supplied with a first control signal. The second gate electrode is supplied with a second control signal.