Power Converter Deterioration Detection Using Auxiliary Terminal Voltage

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Solution Overview

Problem

Conventional deterioration detection circuits for semiconductor elements lack accuracy in determining the deterioration of semiconductor devices, which can lead to failures in power converters used in critical applications.

Innovation Solution

A power converter and deterioration determination device that includes a voltage detection circuit, trigger circuit, and deterioration determination circuit to detect a threshold voltage and current flow between main terminals, using a determination value based on current estimation to accurately determine semiconductor device deterioration.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If conventional deterioration detection circuits use gate voltage and main terminal voltage for determining semiconductor element deterioration, then the detection can be implemented with existing circuit configurations, but the accuracy of determining deterioration is insufficient

Engineering Contradiction:
Improvedeterioration detection accuracyVSAvoidcircuit configuration complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent segments the deterioration detection process into multiple independent measurement components: voltage detection between auxiliary terminal and second main terminal, voltage detection between first main terminal and second main terminal, current detection between first main terminal and second main terminal, and timing detection via trigger circuit. Each component is implemented separately with its own detection circuit, allowing high-accuracy multi-parameter measurement without requiring a single complex integrated circuit.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent introduces an auxiliary terminal as an intermediary measurement point that enables indirect detection of semiconductor element deterioration. By measuring voltage between the auxiliary terminal and main terminals, and correlating this with current measurements, the system achieves accurate deterioration detection without directly measuring gate voltage, thereby improving accuracy while maintaining circuit simplicity.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Measurement precision

If multiple parameters are measured to improve deterioration detection accuracy, then the measurement precision increases, but the device complexity and number of required circuits increase

Engineering Contradiction:
Improvedeterioration determination accuracyVSAvoidnumber of detection circuits
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent implements multi-functional detection circuits that can measure multiple parameters. The voltage detection circuit can detect both voltage between auxiliary terminal and second main terminal, and voltage between first main terminal and second main terminal. The current detection circuit measures current between main terminals. This universal approach allows accurate deterioration determination using multiple parameters without requiring separate dedicated circuits for each measurement.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The semiconductor device itself provides the measurement signals needed for deterioration detection. The voltage and current that naturally flow during normal operation are utilized as measurement signals, eliminating the need for separate excitation sources or test signals. The trigger circuit automatically generates timing signals based on the detected voltage thresholds, making the system self-regulating without external control.

Inventive Principle:
Principle #25Self-service

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enhances the accuracy of detecting semiconductor device deterioration by considering current flow at specific timings, reducing false positives and enabling predictive maintenance for power converters.

Implementation Method 1

a voltage detection circuit configured to detect a voltage between the auxiliary terminal and the second main terminal

Methodology Applied
Scientific EffectVoltage detection: Electric Field

Implementation Method 2

a trigger circuit configured to generate a trigger signal when the voltage detected by the voltage detection circuit becomes greater than or equal to a threshold voltage

Methodology Applied
Scientific EffectThreshold voltage detection: Electric Field

Implementation Method 3

a deterioration determination circuit configured to determine deterioration of the semiconductor device, using a determination value corresponding to a current flowing between the first main terminal and the second main terminal

Methodology Applied
Scientific EffectCurrent measurement: Conduction (electrical)

Data Source

PatentUS12546831B2Power converter, deterioration determination device, and deterioration determination method
Publication Date: 2026.02.10 FUJI ELECTRIC CO LTD
  • US12546831B2 patent drawing
  • US12546831B2 patent drawing
  • US12546831B2 patent drawing

AI summary

A power converter includes a semiconductor device including a semiconductor element having first and second main electrodes and a control electrode, a first main terminal connected to the first main electrode, a second main terminal connected to the second main electrode, an auxiliary terminal connected to the second main electrode, and a control terminal connected to the control electrode. The power converter further includes a circuit generating a command for switching the semiconductor element, a circuit applying a drive voltage to the control electrode according to the command, a circuit detecting a voltage between the auxiliary and second main terminals, a circuit generating a trigger signal when the detected voltage becomes greater than or equal to a threshold voltage, and a circuit determining deterioration of the semiconductor device, using a determination value corresponding to a current flowing between the first and second main terminals in response to the trigger signal.