Power Device Transfer-Curve Matching for Uniform Loss Sharing
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Solution Overview
Problem
Current die binning and matching methods for multi-chip devices, such as power modules, are inadequate as they primarily rely on on-state resistance for static loss mechanisms and threshold voltage for dynamic loss mechanisms, lacking a clear correlation between these parameters, leading to poor matching and inefficient loss distribution.
Innovation Solution
A method and system that utilize device transfer curves and transfer functions to measure and match both static and dynamic loss mechanisms, ensuring accurate characterization and matching of power devices by analyzing current and voltage dynamics over time, thereby enabling equal current sharing and consistent performance across parallel devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If traditional binning methods are used, then manufacturing simplicity is maintained, but matching accuracy and loss distribution are poor
Solution Approach 1:
The patent performs comprehensive device characterization (transfer curve measurement, on-state resistance, threshold voltage) during the manufacturing testing phase, before devices are assembled into multi-chip modules. This preliminary action allows identification and sorting of devices with matched static and dynamic parameters, ensuring uniform loss distribution in the final product while maintaining manufacturing simplicity through automated binning.
Solution Approach 2:
The patent extends the binning criteria from traditional single-parameter (on-state resistance or threshold voltage) to multi-parameter characterization including transfer curve parameters (transconductance, output impedance, threshold voltage), on-state resistance, and dynamic performance metrics. This parameter change enables accurate matching of both static and dynamic loss mechanisms while maintaining manufacturing feasibility through systematic sorting.
2Measurement precision
If comprehensive transfer curve analysis is performed, then matching accuracy is improved, but measurement time and complexity increase
Solution Approach 1:
The patent extracts key parameters (threshold voltage, on-state resistance, transconductance, output impedance) from the complete transfer curve measurement for binning decisions. While the full transfer curve is measured, only the most critical parameters are used for device sorting and matching, reducing the complexity of the binning process while maintaining accurate matching of static and dynamic loss mechanisms.
Solution Approach 2:
The patent performs complete transfer curve measurements (excessive action) to ensure all relevant parameters are captured, but then selectively uses only the most critical parameters (partial action) for the actual binning decision. This approach ensures measurement completeness for accurate characterization while avoiding the time consumption of analyzing every possible parameter, achieving a balance between measurement precision and time efficiency.
Data Source
AI summary
A device binning and/or matching process includes measuring with a testing device currents and/or voltages of a device with respect to time, determining with the testing device binning and/or matching criteria for the device based on transfer data generated from the device currents and/or the voltages measured with respect to time, and outputting with the testing device the binning and/or matching criteria for the device. A system and power module are also disclosed.