Power Gating Circuit With Adaptive Back Bias for Process Skew
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Solution Overview
Problem
Power gating efficiency in semiconductor apparatuses is reduced due to process skew and temperature variations in transistors, leading to inconsistent power consumption in standby mode.
Innovation Solution
A semiconductor apparatus with a power gating circuit that includes a first and second gating transistor, a characteristic monitoring circuit to generate information on the logic circuit's characteristics, and a power gating control circuit to adjust back bias voltages based on this information, ensuring optimal operation and minimal power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If transistors are uniformly controlled in power gating circuit, then device complexity is reduced, but power gating efficiency deteriorates due to process skew and temperature variations
Solution Approach 1:
The patent applies local quality by providing individual back bias voltage control for each gating transistor. The power gating control circuit generates separate back bias voltages (first back bias voltage and second back bias voltage) tailored to the specific characteristics of each logic circuit block, rather than applying a uniform voltage. This localized control compensates for process skew and temperature variations in each region, maintaining high power gating efficiency while managing the complexity through targeted adjustments.
2Reliability
If back bias voltage is adjusted for each gating transistor, then power gating efficiency is improved, but device complexity increases
Solution Approach 1:
The patent implements parameter changes by dynamically adjusting the back bias voltage applied to each gating transistor based on monitored characteristics. The power gating control circuit modifies the voltage parameters (first back bias voltage and second back bias voltage) in response to characteristic information from the logic circuit blocks, enabling adaptive compensation for process and temperature variations without requiring complete circuit redesign.
Solution Approach 2:
The patent employs feedback mechanisms where the power gating control circuit receives characteristic information from the logic circuit blocks and uses this information to adjust the back bias voltages. This closed-loop control allows the system to automatically compensate for variations in transistor characteristics, maintaining optimal power gating efficiency while managing complexity through intelligent control rather than hardware multiplication.
3Manufacturing precision
If characteristic monitoring is implemented, then manufacturing precision is improved through variation compensation, but device complexity increases
Solution Approach 1:
The patent applies self-service by implementing self-diagnosis and self-adjustment capabilities within the power gating circuit. The power gating control circuit automatically monitors characteristic information from the logic circuit blocks and adjusts the back bias voltages without external intervention. This self-service approach compensates for manufacturing variations and operates transparently, improving effective precision without proportionally increasing overall system complexity.
Data Source
AI summary
A semiconductor apparatus may include a logic circuit and a power gating circuit including a gating transistor configured to apply a first supply voltage to the logic circuit based on an operation mode of the semiconductor apparatus. The semiconductor apparatus may be configured to monitor a characteristic of the logic circuit and adjust aback bias voltage to the gating transistor based on the characteristic of the logic circuit.