Power Gating Circuit Back Bias Control for Process Skew Compensation
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Solution Overview
Problem
Power gating efficiency in semiconductor apparatuses is reduced due to process skew and temperature variations in transistors, which affect uniform control and power consumption in standby mode.
Innovation Solution
A semiconductor apparatus with a power gating circuit that includes a first and second gating transistor, a characteristic monitoring circuit to generate information on the logic circuit's characteristics, and a power gating control circuit to adjust back bias voltages based on this information, optimizing power gating efficiency by compensating for process and temperature variations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If uniform control is applied to transistors in power gating circuit, then control simplicity is maintained, but power gating efficiency deteriorates due to process skew and temperature variations
Solution Approach 1:
The patent applies different back bias voltages to different gating transistors based on their individual characteristics. The power gating control circuit generates first and second back bias voltages with different levels, and applies them selectively to first and second gating transistors respectively. This local differentiation compensates for process skew and temperature variations, improving power gating efficiency without sacrificing control simplicity.
2Loss of energy
If back bias voltage is adjusted for each transistor, then power gating efficiency is improved, but device complexity increases
Solution Approach 1:
The patent employs a feedback mechanism where the power gating control circuit monitors the characteristics of logic circuits and adjusts back bias voltages accordingly. The control circuit generates different back bias voltages based on detected variations in transistor characteristics, creating a closed-loop system that automatically compensates for process skew and temperature effects, improving power gating efficiency while maintaining manageable complexity.
3Reliability
If multiple back bias voltages are applied to different gating transistors, then compensation for process and temperature variations is achieved, but manufacturing complexity increases
Solution Approach 1:
The patent changes the electrical parameters (back bias voltage levels) of existing gating transistors rather than modifying their physical structures. The power gating control circuit adjusts the voltage levels dynamically based on operating conditions, compensating for process skew and temperature variations through parameter modulation instead of structural changes, thereby maintaining ease of manufacture while improving reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively adjusts back bias voltages to maintain normal operation while minimizing power consumption, optimizing power gating efficiency by accounting for variations in the semiconductor apparatus's logic circuits.
Implementation Method 1
a power gating control circuit configured to supply a first back bias voltage to the first gating transistor based on the characteristic information
Data Source
AI summary
A semiconductor apparatus may include a logic circuit and a power gating circuit including a gating transistor configured to apply a first supply voltage to the logic circuit based on an operation mode of the semiconductor apparatus. The semiconductor apparatus may be configured to monitor a characteristic of the logic circuit and adjust aback bias voltage to the gating transistor based on the characteristic of the logic circuit.