Power Gating Circuit With Staged Gate Bias for Leakage Control
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Solution Overview
Problem
Portable electronic devices face challenges in reducing unnecessary power consumption and operational errors due to increased function blocks, necessitating improved power gating technologies.
Innovation Solution
A power gating circuit with a power gating switch and switching circuit that dynamically controls voltage levels at a first node using multiple control signals to turn off and on the power gating switch, minimizing leakage current by applying negative and ground voltages during standby states.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If power gating technology is applied to reduce power consumption in portable electronics with increased function blocks, then power consumption is reduced, but leakage current and operational errors may increase
Solution Approach 1:
The switching circuit performs preliminary actions by pre-charging the first node to a first driving voltage level before blocking the driving voltage, and pre-discharging to a second driving voltage level before applying negative voltage. This preliminary action ensures that the power gating switch is fully turned on or off, minimizing leakage current and preventing operational errors during power gating operations
Solution Approach 2:
The patent applies parameter changes by dynamically adjusting the voltage level at the first node through multiple stages: charging to a first driving voltage level (e.g., 0.9V), discharging to a second driving voltage level (e.g., 0V), and then applying a third driving voltage level (negative voltage, e.g., -0.3V). These parameter changes ensure the power gating switch is completely turned off, minimizing leakage current while maintaining operational reliability
2Device complexity
If a simple power gating switch is used to control function blocks, then device complexity is reduced, but leakage current cannot be effectively minimized
Solution Approach 1:
The switching circuit acts as an intermediary between the power source and the power gating switch. It includes a first transistor that controls charging of the first node, a second transistor that controls discharging, and a third transistor that applies negative voltage. This intermediary circuit effectively minimizes leakage current by ensuring complete turn-off of the power gating switch, while adding only moderate complexity to the overall system
Solution Approach 2:
The switching circuit changes the voltage parameter at the first node in multiple stages: from a first driving voltage level (e.g., 0.9V) to a second driving voltage level (e.g., 0V), and then to a third driving voltage level (negative voltage, e.g., -0.3V). These parameter changes ensure the power gating switch is fully turned off, minimizing leakage current with acceptable circuit complexity
3Reliability
If voltage is continuously applied to function blocks, then operational reliability is maintained, but unnecessary power consumption increases
Solution Approach 1:
The power gating circuit implements periodic action by alternately applying and blocking the driving voltage to the first node based on operational requirements. When the function block is not in use, the switching circuit blocks the driving voltage and applies negative voltage to turn off the power gating switch, eliminating unnecessary power consumption while maintaining the ability to quickly restore operation when needed
Data Source
AI summary
A power gating circuit includes a power gating switch and a switching circuit. The power gating switch is coupled to a function block and operates in response to a voltage level of a first node. The switching circuit turns off the power gating switch by discharging the first node to a second driving voltage level during a first time period after blocking a first driving voltage from being applied to the first node in accordance with a plurality of control signals, and applying a third driving voltage to the first node during a second time period after the first time period.