Power-Gating Programming Element for Low-Drop Logic Supply

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Solution Overview

Problem

In semiconductor devices using power gating, high on-state resistance in switching transistors leads to voltage drops, preventing adequate voltage supply to logic circuits, while high off-state resistance increases standby current, necessitating a balance to minimize power consumption and maintain reliability.

Innovation Solution

A programming element comprising a first transistor, a second transistor, and a capacitor is used, where the drain electrode of the first transistor, the gate electrode of the second transistor, and one electrode of the capacitor are electrically connected, allowing for controlled power supply to logic circuits through the second transistor, with capacitive coupling to maintain node potential and reduce resistance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the on-state resistance of the switching transistor is reduced to supply adequate voltage to the logic circuit, then voltage supply is improved, but power consumption increases due to higher standby current

Engineering Contradiction:
Improvevoltage supply adequacyVSAvoidpower consumption
Core Design Contradiction:
ReliabilityVSUse of energy by moving object

Solution Approach 1:

The switching transistor is divided into two separate transistors: a first switching transistor for controlling power supply during operation, and a second switching transistor for controlling power supply during standby. This segmentation allows each transistor to be optimized for its specific function, with the first transistor having lower on-state resistance for adequate voltage supply and the second transistor having higher off-state resistance for reduced standby current

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different transistors are used for different operational states: an n-channel transistor is used for the first switching transistor to achieve low on-state resistance during active operation, while a p-channel transistor is used for the second switching transistor to achieve high off-state resistance during standby. Each transistor's channel type is locally optimized for its specific function

Inventive Principle:
Principle #3Local quality

2Use of energy by moving object

If the off-state resistance of the switching transistor is increased to reduce standby current, then power consumption is reduced, but voltage drop increases when the transistor is on

Engineering Contradiction:
Improvepower consumptionVSAvoidvoltage supply adequacy
Core Design Contradiction:
Use of energy by moving objectVSReliability

Solution Approach 1:

The single switching transistor is segmented into two separate transistors with different characteristics. The first switching transistor is optimized for low on-state resistance to ensure adequate voltage supply during active operation, while the second switching transistor is optimized for high off-state resistance to reduce standby current during idle periods

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The invention changes the resistance parameters of the switching transistors based on operational state. During active operation, the first transistor maintains low on-state resistance for adequate voltage supply. During standby, the second transistor maintains high off-state resistance for reduced power consumption. The gate potentials are also dynamically adjusted to optimize the resistance characteristics for each state

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration effectively suppresses voltage drops to the gate electrode, reduces power consumption, and enhances the reliability and yield of semiconductor devices by managing on- and off-state resistances efficiently.

Implementation Method 1

capacitive coupling between the node and the other of the electrodes of the capacitor

Methodology Applied
Scientific EffectCapacitive coupling: Capacitance

Data Source

PatentUS9503087B2Method of driving semiconductor device
Publication Date: 2016.11.22 SEMICON ENERGY LAB CO LTD
  • US9503087B2 patent drawing
  • US9503087B2 patent drawing
  • US9503087B2 patent drawing

AI summary

A programming element including a first transistor, a second transistor, and a capacitor between a logic circuit using a semiconductor element and a power supply is provided. In the programming element, a node where a drain electrode of the first transistor, a gate electrode of the second transistor, and one of electrodes of the capacitor are electrically connected to each other is formed. A potential can be supplied to each of a source electrode of the first transistor and the other of the electrodes of the capacitor. The power supply and the logic circuit are electrically connected to each other through a source electrode and a drain electrode of the second transistor. A connection state between the power supply and the logic circuit is controlled in accordance with the state of the second transistor.