Semiconductor Power Delivery Grid for Uniform TSV Distribution

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Solution Overview

Problem

Existing semiconductor devices face challenges in uniform power delivery and distribution due to high resistance introduced by through-silicon vias (TSVs), which disrupt circuit layouts and compromise routing efficiency.

Innovation Solution

The implementation of a grid coupled between TSVs decouples them from backside bumps, allowing strategic and flexible placement tailored to specific power delivery and circuit design requirements, enhancing uniformity and thermal management.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Length of moving object

If through-silicon vias (TSVs) are used for power delivery in 3D semiconductor packaging, then vertical interconnection between stacked circuit elements is achieved, but significant resistance is introduced to the power delivery path

Engineering Contradiction:
Improvevertical interconnectionVSAvoidpower delivery uniformity
Core Design Contradiction:
Length of moving objectVSReliability

Solution Approach 1:

The power delivery system is segmented into multiple parallel TSV paths distributed across the substrate. Instead of relying on a single TSV or concentrated TSV cluster, the invention divides the power delivery function across many individual TSVs that are strategically positioned to serve different regions of the stacked circuit elements, thereby reducing overall resistance and improving current distribution uniformity

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The invention transitions from vertical-only TSV placement to a two-dimensional distribution pattern. TSVs are positioned in both vertical and horizontal dimensions to create an optimized power delivery network that accounts for current flow paths in multiple directions, reducing resistance by providing alternative current paths and distributing load across the substrate area

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Power

If TSVs are placed to deliver power to circuit elements, then power distribution is achieved, but sizable keep-out zones are created below circuit elements disrupting circuit layout

Engineering Contradiction:
Improvepower distributionVSAvoidcircuit layout
Core Design Contradiction:
PowerVSDevice complexity

Solution Approach 1:

The invention introduces an intermediary power distribution layer between the TSVs and the circuit elements. This intermediate layer acts as a mediator that collects power from multiple TSVs and redistributes it to circuit elements, allowing TSVs to be positioned in less critical areas while still providing effective power delivery, thereby reducing the impact of keep-out zones on circuit layout

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The invention applies different TSV placement strategies to different regions of the substrate based on local circuit requirements. Areas with high power demand receive denser TSV placement, while regions with sensitive circuitry or routing requirements have TSVs positioned to minimize disruption. This localized optimization allows effective power delivery while preserving circuit layout integrity in critical areas

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach improves power distribution uniformity, optimizes circuit layout, and enhances thermal management by dynamically allocating TSVs based on granular circuit-level needs, minimizing disruptions and maximizing performance.

Implementation Method 1

a first via coupled to the first connection and the grid, the first via is configured to transmit electrical power between the first side and the second side

Methodology Applied
Scientific EffectElectrical conduction: Conduction (electrical)

Data Source

PatentEP4531100A1Systems and methods for power delivery for semiconductor devices
Publication Date: 2025.04.02 AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE LTD
  • EP4531100A1 patent drawingFigure 1
  • EP4531100A1 patent drawingFigure 2
  • EP4531100A1 patent drawingFigure 3

AI summary

The subject technology is directed to systems and methods for power delivery in semiconductor devices. According to an embodiment, the subject technology provides a semiconductor device including a substrate comprising a first side and a second side. A first connection is coupled to the first side and a grid is coupled to the second side. The semiconductor device further comprises a first via coupled to the first connection and the grid, the first via is configured to transmit electrical power between the first side and the second side. In some implementations, the first via may be configured to improve the uniformity of power delivery and distribution, allowing for optimal circuit design and thermal effects. There are other embodiments as well.