Power/Ground Interconnection Network for Reduced IR Drop

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Solution Overview

Problem

Conventional power/ground mesh interconnection schemes in integrated circuit chips result in high voltage drop (IR drop), increased power consumption, and reduced signal timing speed, while also limiting routing space for signal lines.

Innovation Solution

An improved power/ground interconnection network is implemented, featuring interleaved power and ground lines in the topmost metal layer with bump pads and extension portions, such as fishbone-shaped patterns, that reduce metal layer resistance and provide additional space for signal routing by optimizing the distribution of power and ground signals.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Loss of energy

If a conventional power/ground mesh interconnection network is used in the topmost metal layers, then power and ground signals can be distributed to circuit blocks, but the metal layer resistance is high resulting in high IR drop and increased power consumption

Engineering Contradiction:
Improvepower consumptionVSAvoidvoltage stability
Core Design Contradiction:
Loss of energyVSReliability

Solution Approach 1:

The patent transitions from a two-dimensional mesh network to a three-dimensional power/ground network by adding vertical interconnection elements (via holes, trenches, and stacked conductive structures) that extend through multiple metal layers and substrate depths, creating additional current paths and reducing resistance in the power delivery network

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent implements nested conductive structures where conductive plugs are embedded within conductive blocks, which are themselves surrounded by additional conductive layers, creating concentric current paths that reduce overall resistance and provide redundant power delivery channels

Inventive Principle:
Principle #7Nested doll (Nesting)

2Reliability

If a conventional power/ground mesh interconnection network is used in the topmost two or three levels of the interconnection metal layers, then power and ground routing can be established, but routing space for signal lines is significantly limited

Engineering Contradiction:
Improvepower routingVSAvoidrouting space
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

The patent moves power and ground routing from the topmost metal layers to deeper substrate levels by creating vertical power/ground channels through via holes and trenches, thereby freeing up the top metal layers for signal routing and increasing available routing space

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent segments the power/ground network into vertical channels distributed throughout the substrate, with each channel serving localized circuit blocks, thereby reducing the need for extensive horizontal power/ground traces in the top metal layers and freeing space for signals

Inventive Principle:
Principle #1Segmentation

3Reliability

If a conventional power/ground mesh interconnection network is used, then power distribution can be achieved, but the IR drop is high resulting in reduced signal timing speed

Engineering Contradiction:
Improvepower distributionVSAvoidsignal timing speed
Core Design Contradiction:
ReliabilityVSSpeed

Solution Approach 1:

The patent creates nested conductive structures with multiple concentric current paths where inner conductive elements are surrounded by outer conductive layers, providing parallel current flow paths that reduce overall resistance and minimize IR drop to maintain signal timing speed

Inventive Principle:
Principle #7Nested doll (Nesting)

Data Source

PatentUS8772928B2Integrated circuit chip with reduced IR drop
Publication Date: 2014.07.08 MEDIATEK INC
  • US8772928B2 patent drawing
  • US8772928B2 patent drawing
  • US8772928B2 patent drawing

AI summary

An integrated circuit chip includes a power/ground interconnection network in a topmost metal layer over a semiconductor substrate and at least a bump pad on/over the power/ground interconnection network. The power/ground mesh interconnection network includes a first power/ground line connected to the bump pad and extending along a first direction, and a connection portion connected to the bump pad and extending along a second direction.