Power Semiconductor Module Housing for Flexible 3L Connections

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Current power semiconductor module housings are not adequately suited for high-power applications, particularly in 3L topologies, due to limitations in power connections, which restrict their flexibility and increase development costs, and existing solutions are not cost-effective for lower volume production.

Innovation Solution

A power semiconductor module with a housing featuring multiple contacting regions and recesses for screw connections, allowing for flexible configuration of contact electrodes to handle varying current loads, enabling the module to be used in different configuration scenarios without changing the housing configuration, and reducing housing costs by not integrating contact electrodes into the housing.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If traditional power semiconductor module housings are used, then the module structure is simple and manufacturing is straightforward, but the housing is not adequately suited for high-power applications and 3L topologies due to limitations in power connections

Engineering Contradiction:
Improvesuitability for 3L topologies and high-power applicationsVSAvoidhousing structure complexity
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The housing is segmented into multiple contacting regions (first, second, and third contacting regions) that can independently accommodate different contact electrode configurations. This segmentation allows the housing to support various power connection arrangements suitable for 3L topologies without requiring a completely new housing design for each application.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The housing is designed with multi-functional contacting regions that can serve different purposes: the first and second contacting regions can accommodate individual contact electrodes for standard half-bridge configurations, while the third contacting region enables both contact electrodes to be contacted together for 3L topology applications. This universal design allows a single housing to support multiple power semiconductor module configurations.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Reliability

If contact electrodes are integrated into the housing, then the housing provides structural support and electrical connections, but the development and manufacturing effort is very high and only profitable for high volumes

Engineering Contradiction:
Improveelectrical connection reliabilityVSAvoiddevelopment and manufacturing effort
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The electrical connection function is segmented from the housing structure. Contact electrodes are provided as separate components that can be inserted into and electrically connected to the housing's contacting regions. This segmentation allows the housing to provide structural support while contact electrodes provide electrical connections, enabling modular manufacturing and reducing development effort for low-to-medium volume production.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The contact electrodes are extracted from the housing as separate, replaceable components. The housing contains recesses and contacting regions designed to accommodate these external electrodes, allowing the electrical connection functionality to be independently optimized and manufactured separately from the housing structure, thereby reducing overall manufacturing complexity.

Inventive Principle:
Principle #2Taking out (Extraction)

3Adaptability or versatility

If a new module housing is constructed for 3L half-bridge, then the module can achieve proper power terminal arrangement, but the effort and investment costs are very high with low volumes

Engineering Contradiction:
Improvepower terminal arrangement for 3L half-bridgeVSAvoiddevelopment effort and investment costs
Core Design Contradiction:
Adaptability or versatilityVSEase of manufacture

Solution Approach 1:

The housing is designed with universal contacting regions that can accommodate both traditional half-bridge configurations and 3L half-bridge configurations. The third contacting region specifically enables 3L topology by allowing both contact electrodes to be contacted together, eliminating the need for separate housing designs for different power semiconductor module types.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The housing provides dynamic adaptability through its contacting region design, which can accommodate different contact electrode arrangements and configurations. This dynamic capability allows the same housing to be used across multiple applications and power semiconductor module types, reducing development effort and investment costs.

Inventive Principle:
Principle #15Dynamics

4Adaptability or versatility

If two separate module housings are used for 3L half-bridge, then the module can be implemented, but the arrangement is not suitable for rapid switching because each switching operation takes place between the two modules

Engineering Contradiction:
Improve3L half-bridge implementation capabilityVSAvoidswitching speed
Core Design Contradiction:
Adaptability or versatilityVSSpeed

Solution Approach 1:

The housing merges both contact electrodes into a single integrated structure with a third contacting region that allows both electrodes to be contacted together. This merging enables all switching operations to occur within a single module housing, eliminating the need for inter-module switching and thereby achieving rapid switching performance.

Inventive Principle:
Principle #5Merging (Combining)

Data Source

PatentUS20230307332A1Power Semiconductor Module and Method for Producing a Power Semiconductor Module
Publication Date: 2023.09.28 SIEMENS AG
  • US20230307332A1 patent drawing
  • US20230307332A1 patent drawing
  • US20230307332A1 patent drawing

AI summary

A power semiconductor module includes a power semiconductor circuit and a housing partially surrounding the circuit that has a first and second contact electrodes which are each electrically conductively connected to the circuit and are each guided outwards through the housing through a hole in the housing, wherein the housing has first, second and third contacting regions, where the first and second contact electrodes are respectively contactable in the first and second contacting regions, the first and second contact electrodes are contactable together in the third contacting region, the housing has a recess in each contacting region, into which a threaded part is inserted, the recess and the threaded part receive a screw to contact the contact electrodes in each contacting region with an external voltage/current source on an outer face of the housing, and where the contact electrodes also have a recess for receiving the screw.