Power Module Sensor Layout for Transistor Aging Detection
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Solution Overview
Problem
Power modules face challenges in accurately measuring temperature and detecting aging due to the distance of existing sensors from heat sources, leading to potential overheating and premature failure, with no effective means to monitor the remaining useful life of individual power transistors.
Innovation Solution
The placement of primary temperature sensors closer to power transistors on the substrate, combined with a reference temperature sensor at a distance, allows for precise temperature monitoring and aging detection, enabling the calculation of remaining useful life and proactive maintenance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If temperature sensors are placed farther from power transistors, then the design is simpler and manufacturing is easier, but temperature measurement accuracy deteriorates and time delay increases
Solution Approach 1:
The patent transitions from planar sensor placement to three-dimensional integration by positioning temperature sensors in inner substrate layers above or below power transistors. This vertical arrangement reduces the thermal distance between sensors and heat sources while maintaining manufacturing feasibility through multi-layer substrate design.
Solution Approach 2:
The patent embeds temperature sensors within the substrate structure itself, nesting them in inner layers that are physically integrated with the power transistor assembly. This nested configuration allows sensors to be positioned close to heat sources without adding external complexity to the overall device structure.
2Measurement precision
If temperature sensors are placed closer to power transistors, then temperature measurement accuracy improves, but the ability to detect aging through resistance changes deteriorates
Solution Approach 1:
The patent divides the temperature sensing function into two distinct sensor types: primary temperature sensors positioned close to power transistors for accurate temperature measurement, and reference temperature sensors positioned at a distance for aging detection through resistance changes. This segmentation allows each sensor type to optimize its specific function without compromise.
Solution Approach 2:
The reference temperature sensor acts as an intermediary for detecting aging effects. By positioning it away from direct heat sources, it can measure resistance changes that indicate material aging without being confounded by temperature fluctuations, thereby providing a reliable aging indicator.
3Measurement precision
If reference temperature sensor is placed close to power transistors, then temperature measurement is more accurate, but aging detection capability deteriorates due to thermal interference
Solution Approach 1:
The patent extracts the aging detection function from the temperature measurement function by placing the reference temperature sensor at a distance from power transistors. This separation removes the reference sensor from thermal interference, allowing it to clearly detect aging-related resistance changes without temperature confounding factors.
4Reliability
If power modules are overdesigned to guarantee quality under extreme stresses, then reliability improves, but device complexity and cost increase
Solution Approach 1:
The patent implements feedback through dual temperature sensing that enables real-time monitoring of both temperature and aging conditions. This feedback mechanism allows the system to adjust operating parameters dynamically, preventing extreme stress conditions and thereby maintaining reliability without requiring overdesign of the power module components.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enhances temperature monitoring and aging detection, preventing overheating and extending the life of power modules by allowing for timely intervention and reducing the need for additional sensors or complexity.
Implementation Method 1
at least one temperature sensor (preferably all temperature sensors) includes a temperature-dependent resistor, e.g., at least one conductor loop each, having temperature-dependent resistance
Implementation Method 2
at least one reference temperature sensor for providing a comparison temperature is situated at a distance from all power transistors
Implementation Method 3
the temperature is measured much closer than before to the at least one power transistor, and thus to the source of the heat loss. This can prevent a power transistor from heating up too strongly before the heat reaches the conductor loop by thermal conduction
Data Source
AI summary
A power module. The power module has a substrate and at least one power transistor situated on a lower side of the substrate, and at least one temperature sensor situated in the power module. At least one primary temperature sensor is situated on an upper side opposite the at least one power transistor or in an inner substrate layer situated above the at least one power transistor. At least one reference temperature sensor for providing a comparison temperature is situated at a distance from all power transistors, on the upper side or on one of the inner substrate layers. As a result, the transistor temperature can be measured closer to the source of the heat and a reference temperature is provided for detecting resistance changes due to material aging.