3D Power Module Stacked Over Cavity
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Solution Overview
Problem
Current three-dimensional semiconductor packaging techniques for power modules, such as switched mode power supplies, face challenges in efficiently integrating and cooling power transistors and inductors, leading to reduced power density and increased assembly complexity.
Innovation Solution
A power converter sub-assembly configuration that includes a load inductor component stacked with a power transistor block and an interconnect spacer block, forming a cavity, with the load inductor suspended over the cavity, allowing for efficient power switching and integration, and optionally incorporating a driver IC for gate drive control, which can be mounted on a module interconnect substrate or directly on a printed circuit board assembly.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If power transistors and inductors are integrated in a three-dimensional stacked configuration, then power density is improved, but thermal management becomes more challenging
Solution Approach 1:
The patent transitions from planar to three-dimensional stacking of power transistors and inductors, utilizing the vertical dimension to increase power density. Multiple power stages are stacked vertically with interconnects routing power and signals between layers, effectively using spatial dimensionality to pack more power functionality into a smaller footprint while managing thermal paths through the stacked structure.
2Area of stationary object
If three-dimensional stacking is implemented, then package footprint is reduced, but assembly complexity increases
Solution Approach 1:
The power module is segmented into discrete stacked layers including power transistor stages, inductor components, and interconnect structures. Each layer can be independently fabricated and then assembled through stacking, allowing modular manufacturing and simplifying the overall assembly process compared to creating the entire three-dimensional structure as a single integrated component.
3Power
If inductors are placed close to power transistors, then power density increases, but conduction losses increase
Solution Approach 1:
Interconnect structures serve as intermediaries between the power transistors and inductors in the stacked configuration. These specialized interconnects are designed to minimize parasitic inductance and resistance, providing low-impedance power and signal pathways that reduce conduction losses while enabling the compact vertical integration of components.
Data Source
AI summary
A power converter sub-assembly/module includes a power switching assemblage defining a cavity within which can be mounted a driver IC. The power switching assemblage includes a load inductor component stack attached to a power transistor block and an interconnect spacer block, defining a cavity between the two blocks. The power transistor block includes a high and low side FETs attached side-by-side to a switch-node metal carrier that includes an attach-surface opposite the FETs. The power switching assemblage is mountable to an interconnect surface that includes connection pads VIN, VOUT, GND, HG (high-side gate) and LG low-side gate). For a module configuration, the power switching assemblage is combined with a driver IC that provides high (HG) and low (LG) gate drive—the power switching assemblage and the driver IC are mounted to a module interconnect substrate, with the driver IC mounted within the cavity of the power switching assemblage.