Power Module Conductor Layout for High Dielectric Strength
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Solution Overview
Problem
Current semiconductor apparatuses face challenges in achieving high dielectric strength due to the difficulty in laminating thick oxide films for high-withstand voltage applications, which increases manufacturing costs, degrades productivity, and reduces reliability.
Innovation Solution
A semiconductor apparatus design where a first conductor plate with semiconductor devices is separated from a second conductor plate with a relay substrate, sealed by a sealing material that exposes the first conductor plate while keeping the second conductor plate non-exposed, enhancing insulation and dielectric strength.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a thick oxide film is laminated to achieve high withstand voltage, then dielectric strength is improved, but manufacturing cost increases, productivity degrades, and reliability decreases
Solution Approach 1:
The patent divides the conductor plate into multiple isolated conductor regions (first conductor region, second conductor region, third conductor region) separated by insulating films. This segmentation allows each region to be independently formed with standard-thickness oxide films, eliminating the need for thick laminated oxide films while maintaining high dielectric strength through proper electrical isolation.
Solution Approach 2:
The patent introduces insulating films as intermediary elements between conductor regions. These insulating films serve as mediators that provide electrical isolation and achieve the required withstand voltage without requiring thick oxide films, thus avoiding the manufacturing difficulties and reliability issues associated with thick film lamination.
2Reliability
If a thick oxide film is laminated to achieve high withstand voltage, then dielectric strength is improved, but manufacturing cost increases
Solution Approach 1:
The conductor plate is segmented into multiple isolated conductor regions, each formed with standard-thickness oxide films. This approach eliminates the need for expensive thick oxide film lamination processes while achieving equivalent or superior dielectric strength through proper electrical isolation, thereby reducing manufacturing costs.
Solution Approach 2:
The patent uses multiple separate conductor regions with standard oxide films instead of a single thick oxide film structure. This approach employs simpler, more cost-effective fabrication processes that are already established in standard semiconductor manufacturing, avoiding the high costs associated with thick film lamination.
Data Source
AI summary
A semiconductor apparatus includes: a first conductor plate; a second conductor plate separated from the first conductor plate; a plurality of semiconductor devices having back surface electrodes connected to the first conductor plate; a relay substrate mounted on the second conductor plate and including a plurality of first relay pads and a second relay pad connected to the plurality of first relay pads; a plurality of metal wires respectively connecting control electrodes of the plurality of semiconductor devices to the plurality of first relay pads; a first conductor block connected to front surface electrodes of the plurality of semiconductor devices; a second conductor block connected to the second relay pad; and a sealing material sealing the first and second conductor plates, the plurality of semiconductor devices, the relay substrate, the metal wire, and the first and second conductor blocks, the sealing material includes a first principal surface and a second principal surface opposed to each other, the first conductor plate is exposed from the first principal surface, the second conductor plate is not exposed from the first principal surface, and the first and second conductor blocks are exposed from the second principal surface.