Power Module Temperature Monitoring via Conductor Loop

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Solution Overview

Problem

Power modules generate excessive heat locally, leading to reduced service life due to inadequate cooling and delayed temperature measurement, especially in larger arrangements, where individual power transistors can overheat unevenly, causing premature failure and requiring complex structures for accurate monitoring.

Innovation Solution

A power module with a conductor loop for temperature measurement arranged on the top or inner/outer substrate layer opposite the power transistor's source, allowing for closer heat measurement and integration with multilayer substrates for improved accuracy and ease of monitoring, using meandering conductor loops connected via plated-through holes to maximize resistance change and sensitivity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If temperature detection is implemented using NTC/PTC resistors or temperature-sensitive properties of power transistors, then temperature measurement is possible, but the measurement is inaccurate and has significant time delay

Engineering Contradiction:
Improvetemperature measurement accuracyVSAvoidtime delay in temperature measurement
Core Design Contradiction:
Measurement precisionVSLoss of time

Solution Approach 1:

The patent introduces a conductor loop as an intermediary element that is thermally coupled to the power transistor's source. This conductor loop serves as a mediator between the heat source and the measurement system, enabling direct thermal measurement without the inaccuracies and delays of indirect methods. The loop is positioned to directly sense the heat generated at the source, providing real-time temperature data.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent replaces traditional temperature sensing methods (NTC/PTC resistors, diode voltage measurement) with a direct thermal conduction method using a conductor loop. Instead of measuring temperature indirectly through electrical properties that have thermal inertia, the system uses direct thermal conduction through the conductor loop to sense temperature, eliminating the time delay inherent in electrical property-based sensing.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

2Device complexity

If the conductor loop is arranged farther from the power transistor, then the design is simpler, but the temperature measurement becomes inaccurate due to heat loss before reaching the loop

Engineering Contradiction:
Improvedesign complexityVSAvoidtemperature measurement accuracy
Core Design Contradiction:
Device complexityVSMeasurement precision

Solution Approach 1:

The patent applies local quality by positioning the conductor loop specifically at the source region of the power transistor, where the heat generation is most intense. This localized placement ensures that the loop measures the critical temperature at the hottest point without requiring complex arrangements elsewhere in the device. The meandering path is concentrated in the source area to maximize measurement relevance.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent uses a meandering conductor loop that extends in multiple dimensions within the substrate plane. By creating a elongated, winding path rather than a simple linear arrangement, the loop increases its effective sensing area and thermal mass without increasing the linear distance from the power transistor. This dimensional expansion allows better heat capture while maintaining proximity.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Measurement precision

If each power transistor has its own conductor loop, then individual temperature monitoring is achieved, but the manufacturing complexity increases

Engineering Contradiction:
Improveindividual temperature monitoringVSAvoidmanufacturing complexity
Core Design Contradiction:
Measurement precisionVSEase of manufacture

Solution Approach 1:

The patent segments the temperature monitoring system by providing separate conductor loops for each power transistor. This segmentation enables independent temperature measurement of each transistor, allowing individual performance monitoring and failure detection. Each loop is independently formed in the substrate, maintaining manufacturing simplicity while achieving granular monitoring capability.

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution enables precise temperature monitoring of power transistors, preventing overheating and extending the service life of power modules by allowing for targeted cooling and load balancing, reducing the likelihood of premature failure and simplifying temperature management.

Implementation Method 1

the temperature is determined via their temperature-dependent resistance

Methodology Applied
Scientific EffectTemperature-dependent resistance: Electrical Resistance

Implementation Method 2

This prevents a power transistor from overheating before the heat reaches the conductor loop by conduction

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentEP4127633B1Power module
Publication Date: 2024.02.14 ROBERT BOSCH GMBH
  • EP4127633B1 patent drawingFigure 1
  • EP4127633B1 patent drawingFigure 2
  • EP4127633B1 patent drawingFigure 3

AI summary

What is described is a power module (1) comprising a substrate (2) and at least one power transistor (3) arranged on a bottom side of the substrate (2). The power module comprises at least one power connection (4, 5, 6) connected to the substrate (2). The temperature measurement of the power transistor in the prior art is either inaccurate or requires a complicated power transistor structure. According to the invention, a conductor loop (8) for measuring the temperature is arranged on a top side opposite the power transistor (3) or on an inner or outer substrate layer (12). The temperature is thereby able to be measured closer to the heat source and is thereby more accurate, without significantly complicating the structure of the power module.