Power Module Crack Sensing for Insulating Substrate Reliability

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Solution Overview

Problem

Power semiconductor modules experience thermomechanical stress due to CTE mismatches, leading to cracks in the insulating substrate that can cause failure or performance degradation.

Innovation Solution

Incorporating sensors to detect cracks in the insulating substrate during production and operation, allowing for real-time monitoring and corrective actions based on crack information.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Loss of energy

If power semiconductor modules operate at high temperatures to improve efficiency, then power dissipation performance is improved, but thermomechanical stress increases leading to substrate cracks and component failure

Engineering Contradiction:
Improvepower dissipationVSAvoidcomponent failure
Core Design Contradiction:
Loss of energyVSReliability

Solution Approach 1:

The patent applies preliminary action by performing crack detection during the production process before the module is deployed. Sensors are integrated to identify cracks in the insulating substrate early, allowing defective modules to be sorted out before operation. This prevents future failures caused by thermomechanical stress at high operating temperatures.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent implements feedback through continuous monitoring of crack information during production and operation. The sensor system provides real-time data about crack development, enabling corrective actions to be taken based on the monitored information. This feedback loop helps maintain reliability by detecting and addressing crack formation that results from thermal expansion mismatches during high-temperature operation.

Inventive Principle:
Principle #23Feedback

2Reliability

If crack detection is performed during production to improve reliability, then component failure is prevented, but production time and complexity increase

Engineering Contradiction:
Improvedevice failure preventionVSAvoidproduction process
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent replaces complex manual inspection methods with sensor-based detection systems. Instead of visual or manual examination of cracks in the insulating substrate, automated sensors are used to detect crack information during production. This substitution reduces production complexity while maintaining high reliability by providing objective, automated crack detection.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

3Reliability

If sensors are integrated for real-time crack monitoring to prevent failure, then operational reliability is improved, but device complexity and cost increase

Engineering Contradiction:
Improveoperational reliabilityVSAvoidsensor integration
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies self-service by enabling the power semiconductor module to monitor its own structural integrity through integrated sensors. The module performs self-diagnosis for crack formation in the insulating substrate during operation, providing real-time information about its own health status. This self-monitoring capability improves operational reliability without requiring external inspection systems, as the module serves its own inspection needs.

Inventive Principle:
Principle #25Self-service

Data Source

PatentUS12431395B2Semiconductor power module with crack sensing
Publication Date: 2025.09.30 INFINEON TECHNOLOGIES AG
  • US12431395B2 patent drawing
  • US12431395B2 patent drawing
  • US12431395B2 patent drawing

AI summary

A method of producing a power semiconductor module includes providing a power electronics carrier that includes a structured metallization layer disposed on an electrically insulating substrate layer, performing a production step of the power semiconductor module using the power electronics carrier, using a sensor to obtain crack information during the production step, the crack information comprising information about whether one or more cracks occurred in the electrically insulating substrate layer during the production step, analyzing the crack information, and performing one or more of the following after analyzing the crack information: performing a subsequent production step of the power semiconductor module dependent upon the analyzed crack information, cataloging the analyzed crack information, and performing a further investigative step to inspect the electrically insulating substrate layer using the analyzed crack information.