Power Module Embedding Structure Reducing Parasitic Inductance

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Solution Overview

Problem

Conventional power modules in synchronous buck converters face inefficiencies due to high parasitic inductance from bond wire and metal clip connections, leading to lower power supply efficiency and thermal performance, especially at high frequencies.

Innovation Solution

A power module design featuring a flip-chip configuration with electrically conductive paths embedded in an insulating body to connect vertical low-side and lateral high-side power transistors, eliminating the need for bond wires and metal clips, thereby reducing parasitic inductance and enhancing connectivity within the module.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If bond wires or metal clips are used to connect power switch devices, then the devices can be connected to form the switch node, but the parasitic inductance increases leading to lower power supply efficiency

Engineering Contradiction:
Improveconnection reliabilityVSAvoidpower supply efficiency
Core Design Contradiction:
ReliabilityVSLoss of energy

Solution Approach 1:

The patent merges the connection function and support function into a single integrated substrate structure. The substrate provides both mechanical support for the power switch devices and electrical connection paths, eliminating the need for separate bond wires or metal clips. This integration reduces the number of connection interfaces and minimizes parasitic inductance, thereby improving power supply efficiency while maintaining connection reliability.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent extracts the connection function from traditional discrete components (bond wires, metal clips) and embeds it directly into the substrate through conductive paths. By taking out the intermediate connection elements and integrating their function into the substrate, the design eliminates the parasitic inductance associated with separate connection components while maintaining the necessary electrical connectivity.

Inventive Principle:
Principle #2Taking out (Extraction)

2Ease of manufacture

If conventional bond wire connections are used for current sense, then the connection can be made, but measurement inaccuracy is introduced

Engineering Contradiction:
Improveconnection easeVSAvoidcurrent sense accuracy
Core Design Contradiction:
Ease of manufactureVSMeasurement precision

Solution Approach 1:

The patent merges the current sense connection with the substrate structure itself. The conductive paths embedded in the substrate serve dual purposes: providing mechanical support and enabling accurate current measurements. This integration eliminates the measurement errors introduced by conventional bond wire connections, as the substrate provides a stable, low-inductance path for current sensing while maintaining ease of manufacture through standardized substrate fabrication processes.

Inventive Principle:
Principle #5Merging (Combining)

3Adaptability or versatility

If separate semiconductor dies are used for driver and power switch devices, then component functionality can be achieved, but parasitic inductance increases slowing down power supply turn on speed

Engineering Contradiction:
Improvecomponent functionalityVSAvoidpower supply turn on speed
Core Design Contradiction:
Adaptability or versatilityVSSpeed

Solution Approach 1:

The patent transitions from a planar connection topology to a three-dimensional integrated structure. Power switch devices are mounted on the substrate in a configuration that utilizes vertical and lateral dimensions, with conductive paths embedded within the substrate thickness. This dimensional change allows for shorter current paths and reduced loop areas, minimizing parasitic inductance and enabling faster power supply turn-on speeds while maintaining the necessary component functionality.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Data Source

PatentUS11121708B2Power module having an embedding structure
Publication Date: 2021.09.14 INFINEON TECH AUSTRIA AG
  • US11121708B2 patent drawing
  • US11121708B2 patent drawing
  • US11121708B2 patent drawing

AI summary

A power module includes: an embedding structure comprising an electrically insulating body; a first semiconductor chip embedded in the electrically insulating body and comprising a vertical low-side power transistor; and a second semiconductor chip comprising a lateral high-side power transistor. The lateral high-side power transistor is electrically connected to the vertical low-side power transistor through one or more first electrically conductive paths embedded in the electrically insulating body to form a switch node of a half bridge circuit. The switch node is electrically connected to a terminal of the embedding structure through one or more second electrically conductive paths embedded in the electrically insulating body.