Power Semiconductor Module Heat Layer With Foam-Eutectic Bonding
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Solution Overview
Problem
Existing power semiconductor modules face challenges in achieving improved thermal conductivity between the module and a heat sink, while also requiring a reliable bonding mechanism.
Innovation Solution
A power semiconductor module arrangement featuring a heat-conducting layer composed of metallic foam and eutectic material, where the eutectic material fills the cavities within the metallic foam, providing enhanced thermal conductivity and a firm substance-to-substance bond with the heat sink.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a conventional heat-conducting layer is used, then thermal conductivity is improved, but bonding reliability deteriorates
Solution Approach 1:
The heat-conducting layer is formed as a composite material consisting of metallic foam (aluminum or copper) filled with eutectic material (such as indium, tin, or their alloys). This composite structure combines the high thermal conductivity of metals with the excellent bonding properties of eutectic materials, simultaneously achieving both thermal performance and reliable bonding to the heat sink.
Solution Approach 2:
The metallic foam provides a porous three-dimensional structure with high surface area and interconnected channels. This porous structure allows the eutectic material to penetrate and fill the cavities, creating extensive contact areas with the heat sink while maintaining high thermal conductivity through the metal framework.
2Temperature
If thermal conductivity is enhanced, then heat dissipation is improved, but manufacturing complexity increases
Solution Approach 1:
The metallic foam structure is prepared in advance before the eutectic material is applied. This preliminary preparation of the foam substrate simplifies the subsequent bonding process, as the eutectic material can be directly applied to the pre-formed porous structure without requiring complex simultaneous processing of both components.
Solution Approach 2:
The invention utilizes phase changes of the eutectic material (melting and solidification) during the bonding process. By controlling temperature parameters, the eutectic material transitions from solid to liquid state for infiltration into the foam, then solidifies to create strong bonds, simplifying the manufacturing process through thermally-driven material transformation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively enhances thermal conductivity and ensures a stable bond between the power semiconductor module and the heat sink, addressing thermal bottlenecks and enabling efficient heat dissipation during operation.
Implementation Method 1
the heat-conducting layer consists of a metallic foam and an eutectic material filling the cavities within the metallic foam
Implementation Method 2
Heat that is generated by the controllable semiconductor components is dissipated through the substrate and further through an (optional) base plate to a heat sink. A heat-conducting layer is usually arranged between the substrate and the heat sink
Data Source
AI summary
A power semiconductor module arrangement includes a power semiconductor module. The power semiconductor module includes a substrate and a heat-conducting layer arranged on a lower surface of the power semiconductor module. The lower surface of the power semiconductor module is a surface that is configured to be mounted to a heat sink. The heat-conducting layer includes a metallic foam and an eutectic material filling cavities within the metallic foam.