Power Module Insulating Layer Thickness Calculation
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Solution Overview
Problem
The conventional method for determining the thickness of the insulating layer in power modules is unclear and time-consuming, relying on repeated experiences and experimental manufacturing, which delays the confirmation of design standards.
Innovation Solution
The use of a specific insulating structure that determines the thickness of the insulating layer between the power semiconductor device and the heat dissipating casing, allowing for faster design completion by considering the Paschen curve and relative permittivity to prevent partial discharge and maintain thermal conductivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the insulating layer thickness is increased to prevent discharge when separated, then insulation reliability is improved, but thermal resistance increases
Solution Approach 1:
The patent applies parameter changes by utilizing the Paschen curve relationship between gas pressure and breakdown voltage to determine the minimum required insulating layer thickness. By calculating the breakdown voltage based on atmospheric pressure and gap distance, the patent establishes a precise thickness parameter that prevents discharge while minimizing thermal resistance impact.
Solution Approach 2:
The patent replaces empirical mechanical trial-and-error methods with a theoretical physics-based calculation system. Instead of relying on repeated experimental manufacturing and heat load cycle tests, the patent uses the Paschen curve and relative permittivity calculations to determine the optimal insulating layer thickness, substituting mechanical experimentation with physical law-based design.
2Reliability
If the insulating layer thickness is determined through experimental manufacturing and heat load cycle tests, then insulation reliability is ensured, but development time increases
Solution Approach 1:
The patent performs preliminary action by calculating the required insulating layer thickness in advance using the Paschen curve and electrical field distribution analysis. This allows the design standard to be confirmed during the design phase without requiring prolonged experimental validation, thereby reducing development time while ensuring insulation reliability.
Solution Approach 2:
The patent substitutes time-consuming mechanical experimentation and heat load cycle tests with a theoretical calculation system based on the Paschen curve and relative permittivity. This replacement eliminates the need for repeated experimental manufacturing and long-term testing, significantly reducing development time while maintaining reliability assurance.
3Temperature
If the insulating layer thickness is reduced to improve heat dissipation, then thermal resistance decreases, but insulation reliability deteriorates
Solution Approach 1:
The patent applies parameter changes by precisely calculating the minimum insulating layer thickness using the Paschen curve relationship between atmospheric pressure, gap distance, and breakdown voltage. This calculation identifies the optimal thickness parameter that simultaneously achieves adequate insulation reliability and minimal thermal resistance, avoiding both excessive and insufficient thickness.
Solution Approach 2:
The patent replaces trial-and-error thickness optimization with a physics-based calculation system. By using the Paschen curve and electrical field analysis, the patent determines the precise minimum thickness required for insulation reliability, eliminating the need to rely on excessive thickness for safety margins and thereby optimizing thermal performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the rapid determination of insulating layer thickness, ensuring high insulation reliability and efficient heat dissipation in power modules, reducing thermal resistance and preventing partial discharge, thus improving the power module's performance and longevity.
Implementation Method 1
an insulating layer is formed between the power semiconductor device and the heat dissipating casing
Implementation Method 2
heat generated by a power semiconductor device is dissipated from both surfaces of the power module
Implementation Method 3
the power module repeatedly enters into a high-temperature state due to the heat generated by the power semiconductor device in operation and a low-temperature state in the stop state
Data Source
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AI summary
Provided is a power conversion device including an insulating member manufactured such that a thickness di (mm) of the insulating member made from a resin, provided between a heat dissipating surface of a conductor plate bonded to a power semiconductor device and a heat dissipating plate that dissipates the heat of the power semiconductor device satisfies a relation of di > (1.36 × 10-8 × Vt2 + 3.4 × 10-5 × Vt - 0.015) × εr, where a relative permittivity of the insulating member is εr and a surge voltage generated between the conductor plate and the heat dissipating plate accompanied by an ON/OFF switching operation of the power semiconductor device is Vt (V). The conductor plate of the power semiconductor device, the insulating member, and the heat dissipating plate are bonded by thermocompression bonding.