Power Module Layout Using Parasitic Mutual Coupling for Faster Switching
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Solution Overview
Problem
Conventional power modules face challenges in optimizing dynamic performance while maintaining manufacturability and device reliability, often leading to increased costs and size due to the use of internal gate resistors and other components.
Innovation Solution
The power module design incorporates parasitic mutual coupling through symmetrical or asymmetrical geometric configurations of conductive structures, including primary and secondary parasitic inductors, to enhance dynamic performance without additional components.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If internal gate resistors and other components are used to control dynamic performance, then the dynamic performance of semiconductor switching devices is improved, but the design complexity, manufacturability, device reliability, cost, and footprint increase
Solution Approach 1:
The patent extracts and eliminates the need for internal gate resistors and other control components by utilizing the inherent parasitic inductors already present in the power module's conductive structures. The dynamic performance control is achieved through the geometric configuration of existing conductive paths rather than additional components.
Solution Approach 2:
The patent enables the power module to self-regulate its dynamic performance using its own parasitic inductors. The mutual coupling between parasitic inductors in different conductive structures provides automatic control of switching characteristics without requiring external control components or complex design interventions.
2Speed
If internal gate resistors and other components are used to control dynamic performance, then the dynamic performance of semiconductor switching devices is improved, but the cost and footprint of the final product increase
Solution Approach 1:
The patent merges the function of dynamic performance control with the existing power delivery conductive structures. The same conductive paths that carry power also provide the parasitic inductance needed for dynamic control, eliminating the need for separate control components and reducing overall footprint.
Solution Approach 2:
The conductive structures in the power module serve multiple functions: they deliver power to the semiconductor devices and simultaneously provide the parasitic inductors needed for dynamic performance control. This multi-functionality reduces the number of components needed and minimizes the module footprint.
3Speed
If internal gate resistors and other components are used to control dynamic performance, then the dynamic performance of semiconductor switching devices is improved, but the manufacturability and device reliability are compromised
Solution Approach 1:
The patent removes the need for additional control components that complicate manufacturing. By using only the inherent parasitic inductors in the conductive structures, the design reduces the number of components that need to be sourced, placed, and configured during manufacturing, thereby improving manufacturability.
Solution Approach 2:
The power module uses its own inherent parasitic characteristics to achieve dynamic performance control, eliminating the need for additional control components that would complicate assembly and testing processes. This self-service approach improves both manufacturability and device reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach optimizes switching speed and dynamic performance of semiconductor devices, reducing negative effects on gate current and improving manufacturability and cost-effectiveness.
Implementation Method 1
mutual coupling between the first secondary parasitic inductor and the primary parasitic inductor and mutual coupling between the second secondary parasitic inductor and the primary parasitic inductor
Data Source
AI summary
The present disclosure relates to a power module with a power path extending through a first field-effect transistor (FET) and a second FET. A primary conductive structure connecting the first FET and the second FET in series provides a primary parasitic inductor within the power path. A first secondary conductive structure connected to both a gate and a source of the first FET provides a first secondary parasitic inductor within a first gate path, and a second secondary conductive structure connected to both a gate and a source of the second FET provides a second secondary parasitic inductor within a second gate path. The first secondary conductive structure and the second secondary conductive structure are configured such that mutual coupling between the first secondary parasitic inductor and the primary parasitic inductor and mutual coupling between the second secondary parasitic inductor and the primary parasitic inductor are substantially symmetrical.