Power Module Gate Layout With Inter-Substrate Oscillation Damping
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing power modules face challenges in achieving fast switching while preventing destructive oscillations between substrates, particularly due to asymmetrical parasitic gate loop inductances, which can lead to resonance and potential damage.
Innovation Solution
The implementation of an oscillation damping device, comprising dissipative or high impedance elements, is introduced between substrates to dampen resonances without compromising switching performance, utilizing components like resistors, capacitors, or ferrite beads to create an asymmetric layout.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If an asymmetric layout is used to connect gate connection points to the common terminal, then switching speed is improved, but destructive oscillations and resonances occur between substrates
Solution Approach 1:
The patent applies asymmetry by intentionally designing different connection lengths from the first and second gate connection points to the common terminal. The first connection has a first length and the second connection has a second length that is different from the first length. This asymmetric configuration creates controlled parasitic inductance differences that improve switching speed while the oscillation damping device compensates for potential oscillations.
Solution Approach 2:
The oscillation damping device acts as an intermediary element connected between the first and second substrates. It mediates the electromagnetic interactions between the asymmetrically connected gate terminals, absorbing or damping oscillations and preventing destructive resonances while allowing the asymmetric layout to maintain its switching performance benefits.
2Productivity
If fast switching is implemented, then productivity is improved, but destructive oscillations occur that can damage the power module
Solution Approach 1:
The patent converts the harmful effect of parasitic inductances and oscillations into a beneficial design feature. By intentionally creating an asymmetric layout with controlled connection lengths, the design accepts and manages the resulting parasitic effects through the oscillation damping device, enabling faster switching speeds while preventing damage. The harmful oscillations are transformed into a controlled design parameter.
Solution Approach 2:
The oscillation damping device provides preliminary protection against destructive oscillations by being pre-connected between the substrates before the oscillations can develop. This preventive measure counteracts the harmful effects of fast switching by damping oscillations before they can grow to damaging levels, allowing high-speed operation without compromising reliability.
3Reliability
If symmetric connection is used between substrates, then oscillation damping is improved, but switching speed decreases
Solution Approach 1:
The patent deliberately rejects symmetric connection in favor of asymmetric connection to achieve better switching performance. The different connection lengths (first length vs. second length) create optimized current paths for fast switching, while the oscillation damping device compensates for any potential oscillations, proving that asymmetry can simultaneously achieve both speed and reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively eliminates destructive oscillations, enhances switching speed, and allows for cost-effective manufacturing with reduced complexity, while maintaining reliable current sharing and substrate potential balance.
Implementation Method 1
an oscillation damping device, wherein the oscillation damping device is electrically connected between the first substrate and the second substrate
Implementation Method 2
The first gate connection point is spaced further away from a gate terminal line than the second gate connection point, such that the electrical path of the connections of the first and second substrates with the common terminal is asymmetric
Data Source
Figure 1
Figure 2
Figure 3
AI summary
A Power module (100) comprises - a first substrate (101) with a first connection point (111), - a second substrate (102) with a second connection point (112), wherein the first connection point (111) and the second connections terminal (112) are electrically connected in parallel to a common terminal (104), - a plurality of power semiconductor chips (103), wherein a first part of the power semiconductor chips (103) is mounted on the first substrate (101) and electrically connected to the first connection point (111), and wherein a second part of the power semiconductor chips (103) is mounted on the second substrate (102) and electrically connected to the second connection point (112), - an oscillation damping device (200), wherein the oscillation damping device (200) is electrically connected between the first substrate (101) and the second substrate (102).