Semiconductor Power Module Pressure Contact Thermal Management
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing power semiconductor modules face challenges in achieving optimal heat dissipation due to indirect thermal connections and limited current-carrying capacity when using direct pressure methods, which are not efficiently scalable in real applications.
Innovation Solution
A power semiconductor module design featuring a pressure contact arrangement with a power electronic switching device, a housing, and load connection elements, utilizing a foil composite connecting device with a pressure body that applies pressure to the module's substrate, ensuring direct electrical connections and enhanced thermal contact through a thermally conductive path.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If direct pressure is applied to power semiconductor components for thermal connection, then thermal contact is improved, but current-carrying capacity is reduced due to limited bonding area
Solution Approach 1:
The pressure body is divided into multiple pressure zones with different pressure elements (first pressure elements for electrical connection, second pressure elements for thermal connection). This segmentation allows independent optimization of pressure distribution for different functions without compromising either current-carrying capacity or thermal contact.
Solution Approach 2:
Different regions of the pressure body are designed with different properties: the first region has pressure elements configured for optimal electrical connection with adequate bonding area, while the second region has pressure elements configured for optimal thermal contact. This local differentiation resolves the contradiction by providing specialized pressure zones for each function.
2Temperature
If multiple contact feet are used for thermal connection, then thermal contact area is increased, but the connection remains indirect and insufficient
Solution Approach 1:
The patent merges the functions of multiple contact feet into a single integrated pressure body that applies distributed pressure through multiple pressure elements. This unified structure ensures coordinated pressure application across all contact points, creating an optimal thermal path from the power semiconductor component to the cooling device without the inefficiencies of separate contact feet.
3Temperature
If pressure is applied to substrate areas for thermal connection, then thermal contact is improved, but electrical connection areas are reduced
Solution Approach 1:
The pressure body is segmented into distinct pressure zones: one zone applies pressure to substrate areas for thermal connection, while another zone applies pressure to electrical connection areas. This spatial segmentation ensures that thermal and electrical connection requirements are met simultaneously without compromising either function.
Solution Approach 2:
Different local regions of the pressure body are designed with different pressure characteristics and target different areas of the power semiconductor component. This allows optimal pressure application for thermal contact in one region while maintaining adequate pressure and bonding area for electrical connection in another region.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design optimizes heat dissipation by ensuring a direct and efficient thermal connection between the power semiconductor component and the cooling device, while maintaining the current-carrying capacity and scalability of the module.
Implementation Method 1
the pressure body presses on a section of the second main surface of the connecting device... ensuring a direct and efficient thermal connection between the power semiconductor component and the cooling device
Data Source
Figure 1~2
Figure 3~4
Figure 5~6
AI summary
A power semiconductor module in a pressure contact configuration is presented, comprising a power electronic switching device, a housing, externally leading first load connection elements, and a first pressure device. The switching device includes a substrate with a power semiconductor device, an internal connection device, internal second load connection devices, and a second pressure device. The connection device is designed as a foil composite. The second pressure device has a pressure body with a first recess, which features a first pressure element projecting towards the power semiconductor device. This pressure element presses against a section of the connection device, and this section is arranged within the area of the power semiconductor device in projection along the normal direction of the power semiconductor device.Furthermore, the first load connection devices are directly electrically connected to the load contact points of the second load connection devices, which are arranged on the top of the pressure body, in accordance with the correct polarity.