Power Module Shutdown Control for Short-Circuit Heat Management
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Solution Overview
Problem
Semiconductor devices face damage from external short circuits due to excessive current, leading to localized heating and potential latchup, which existing technologies fail to adequately mitigate.
Innovation Solution
Implementing temperature and current sensing within semiconductor devices to predict and manage energy distribution between regions, using integrated circuits and sensors to adjust the current distribution and control switching operations, thereby reducing temperature hotspots and preventing latchup.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the semiconductor device is switched off rapidly to protect against external short circuit, then device protection is improved, but localized heating and energy concentration may damage the device
Solution Approach 1:
The patent changes the switching parameters by controlling dI/dt (rate of current change) to manage energy distribution. By adjusting the switching profile parameters, the device can turn off rapidly enough for protection while distributing energy to prevent localized heating damage.
Solution Approach 2:
The patent implements dynamic switching control where the shutdown profile is not fixed but adaptively adjusted. The system dynamically manages the energy distribution between different regions (JFET region vs. avalanche region) based on real-time conditions, allowing optimal balance between protection and heat management.
2Reliability
If current is distributed to the avalanche region to prevent latchup, then device reliability is improved, but temperature hotspots may still occur
Solution Approach 1:
The patent uses parameter changes to control the switching profile, specifically managing dI/dt to optimize energy distribution. By adjusting switching parameters, the system can direct current to the avalanche region for latchup prevention while controlling the magnitude and timing to minimize temperature hotspot formation.
Solution Approach 2:
The patent incorporates temperature sensing and modeling feedback to continuously monitor and adjust energy distribution. The system measures temperature, predicts temperature effects based on current distribution models, and uses this feedback to optimize the switching profile in real-time, balancing latchup prevention with hotspot avoidance.
3Reliability
If temperature sensing and predictive modeling are implemented, then energy distribution control is improved, but device complexity increases
Solution Approach 1:
The patent makes the integrated circuit perform multiple functions: it senses temperature, models temperature effects, predicts energy distribution, and controls switching profiles. By consolidating these functions into a single control system, the patent reduces overall system complexity despite the advanced capabilities required for optimal energy management.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach extends the operational life of semiconductor devices by reducing temperature hotspots and improving survivability during external short circuits, effectively managing energy distribution to prevent device failure.
Implementation Method 1
Each switch of the plurality of switches may include a temperature sensing diode formed proximate a gate structure of the switch
Implementation Method 2
A current sensor may extend about each aperture, and the current sensors may be configured to measure current through each switch of the plurality of switches
Implementation Method 3
The integrated circuit may be configured to model a temperature distribution within each switch. The model may determine a temperature effect within each switch based on a switching loss current distribution
Implementation Method 4
predicting a temperature effect within two regions of the semiconductor device based on a range of distribution of the amount of current between the two regions of the semiconductor device
Data Source
AI summary
Power semiconductor devices according to embodiments of the present technology may be operated to protect components of the semiconductor device. Methods for operation of the devices may include measuring a temperature within a source region of the semiconductor device. The methods may include measuring at the semiconductor device an amount of current associated with a short circuit external to the semiconductor device. The methods may include predicting a temperature effect within two regions of the semiconductor device based on a range of distribution of the amount of current between the two regions of the semiconductor device. The methods may include determining a particular distribution of the amount of current between the two regions of the semiconductor device. The methods may also include shutting off the semiconductor device to cause the particular distribution of current between the two regions of the semiconductor device.