Power Module Shutdown Control for Short-Circuit Hotspot Protection
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Solution Overview
Problem
Semiconductor devices face damage from external short circuits due to excessive current, leading to localized heating and potential latchup, which conventional technologies fail to adequately address by either distributing switching losses near the gate or causing rapid voltage increase, resulting in reduced device lifetime.
Innovation Solution
Implementing device-level temperature and current sensing to predict temperature gains and control switching operations, distributing energy between regions to limit damage, using integrated thermal sense diodes and current sensors to measure and adjust current distribution, and employing an observer to model temperature effects and adjust the time rate of current change (dI/dt) to prevent latchup.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the device is switched off rapidly to protect against external short circuit, then device protection is improved, but localized heating damage increases due to energy release
Solution Approach 1:
The patent applies dynamics by making the switching-off speed variable rather than fixed. The control system dynamically adjusts the switching-off speed based on real-time temperature measurements from multiple sensors. When temperature exceeds thresholds, the system automatically reduces switching-off speed to distribute energy release, preventing localized heating damage while still providing protection.
Solution Approach 2:
The patent changes the parameter of switching-off speed from a constant value to a variable parameter that can be adjusted based on temperature conditions. By modifying this key parameter dynamically, the system resolves the contradiction between rapid switching for protection and controlled energy release to avoid heating damage.
2Duration of action of stationary object
If switching loss is distributed near the gate structure, then device lifetime is improved, but temperature control becomes difficult leading to potential latchup
Solution Approach 1:
The patent implements feedback by using multiple temperature sensors positioned at critical locations including near the gate structure and in the bulk material. These sensors continuously monitor temperature and feed this information back to the control system, which then adjusts the switching-off speed in real-time to maintain temperature within safe limits while distributing switching loss to extend device lifetime.
Solution Approach 2:
The patent applies preliminary action by measuring temperature at multiple locations before switching operations occur and using these measurements to pre-determine the appropriate switching-off speed. This predictive approach allows the system to prevent temperature excursions before they cause latchup, while still achieving beneficial switching loss distribution.
3Device complexity
If conventional switching-off methods are used, then simplicity is maintained, but device survivability from external short circuits is reduced
Solution Approach 1:
The patent introduces temperature sensors and a control system as intermediary elements between the external short circuit condition and the switching-off action. These intermediaries provide real-time temperature information and automatically adjust switching parameters, significantly improving device survivability without requiring complex external protection circuits or manual intervention.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces temperature hotspots, increases device lifetime, and improves survivability from external short circuits by efficiently distributing energy within the semiconductor device, minimizing damage and preventing latchup.
Implementation Method 1
measuring a temperature within a source region of the semiconductor device
Implementation Method 2
measuring at the semiconductor device an amount of current associated with a short circuit external to the semiconductor device
Implementation Method 3
When the device is switched off in response, energy release within the device may cause localized heating that may be substantial enough to damage the device
Data Source
AI summary
Power semiconductor devices according to embodiments of the present technology may be operated to protect components of the semiconductor device. Methods for operation of the devices may include measuring a temperature within a source region of the semiconductor device. The methods may include measuring at the semiconductor device an amount of current associated with a short circuit external to the semiconductor device. The methods may include predicting a temperature effect within two regions of the semiconductor device based on a range of distribution of the amount of current between the two regions of the semiconductor device. The methods may include determining a particular distribution of the amount of current between the two regions of the semiconductor device. The methods may also include shutting off the semiconductor device to cause the particular distribution of current between the two regions of the semiconductor device.