Power Module Cover Contact With Sintered High-Temperature Joints

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Solution Overview

Problem

Power modules with soldered connections experience detachment and reduced performance due to high temperatures and thermomechanical loads, leading to decreased power density and operational safety.

Innovation Solution

Implementing a sintered connecting layer using metal particles like silver or copper, which forms a high-temperature-resistant connection with an electrical cover contact element, providing both electrical and thermal conductivity, to stabilize power semiconductors and enhance module performance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If soldered connections are used to connect power semiconductors and cover contact elements, then the assembly process is simple and cost-effective, but the connections melt and loosen under high temperatures above 230°C, reducing power density and operational safety

Engineering Contradiction:
Improveassembly simplicityVSAvoidconnection stability at high temperature
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent changes the fundamental parameter of connection material from solder (melting point 210-300°C) to sintered metal particles (melting point >962°C for silver, >1085°C for copper). This parameter change in melting temperature enables the connection to withstand high operating temperatures above 230°C without melting or loosening, directly resolving the reliability issue while maintaining assembly effectiveness through sintering processes

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent employs composite material structures: sintered connecting layers composed of metal particles (silver or copper) combined with binding agents, forming a composite material that achieves both high-temperature resistance and mechanical stability. The sintered metal particle structure provides thermal stability while the composite nature enables effective bonding to power semiconductors and cover contact elements

Inventive Principle:
Principle #40Composite materials

2Ease of manufacture

If soldered connections are used, then manufacturing costs are lower, but the power density and service life of the module decrease due to connection detachment under thermomechanical loads

Engineering Contradiction:
Improvemanufacturing costVSAvoidservice life
Core Design Contradiction:
Ease of manufactureVSDuration of action of moving object

Solution Approach 1:

The patent utilizes spherical or irregularly shaped metal particles for the sintered connecting layers. These curved particle structures pack efficiently and create multiple contact points during sintering, enhancing mechanical interlocking and connection strength. The particle morphology contributes to resistance against thermomechanical loads, extending service life under high-temperature operation

Inventive Principle:
Principle #14Spheroidality (Curvature)

Solution Approach 2:

By changing the connection material from soft solder to sintered metal particles with higher melting points and superior mechanical properties, the patent achieves connections that maintain integrity under thermomechanical stress. This parameter change in material properties directly extends the duration of action and service life of the power module in high-temperature applications

Inventive Principle:
Principle #35Parameter changes

3Ease of manufacture

If soldered connections are used, then the assembly process is straightforward, but operational safety is compromised due to melting and loosening of joints under high temperatures

Engineering Contradiction:
Improveassembly process simplicityVSAvoidhigh temperature damage
Core Design Contradiction:
Ease of manufactureVSObject-affected harmful factors

Solution Approach 1:

The patent fundamentally changes the thermal parameter of the connection material by using sintered metal particles with melting points exceeding 962°C (silver) or 1085°C (copper), compared to solder with melting points of 210-300°C. This parameter change enables the connection to resist high-temperature damage and prevent joint melting or loosening during power module operation

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent replaces the temperature-sensitive solder material with durable sintered metal particle connections that can withstand extreme thermal conditions. This substitution eliminates the vulnerability to high-temperature damage while maintaining effective electrical and thermal connectivity throughout the module's operational life

Inventive Principle:
Principle #27Cheap short-living objects (Disposable)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The sintered connections offer improved detachment resistance, thermal conductivity, and increased power density and service life, even under extreme conditions, minimizing the need for additional temperature management measures.

Implementation Method 1

A sintered connection can be understood in particular as a connection which can be formed or is formed by sintering metal particles, for example silver and/or copper particles, for example at an elevated temperature, in particular below the melting temperature, and for example under increased pressure

Methodology Applied
Scientific EffectSintering: Sintering

Implementation Method 2

sintered connections can advantageously have a comparatively high thermal conductivity, for example on the order of >100 W/mK at room temperature

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS20250337338A1Power module having cover contact element and sintered connection
Publication Date: 2025.10.30 ROBERT BOSCH GMBH
  • US20250337338A1 patent drawing
  • US20250337338A1 patent drawing

AI summary

A power module. The power module includes a circuit carrier. A first sintered connecting layer is applied to the circuit carrier. At least one power semiconductor is applied to at least one portion of the first sintered connecting layer. At least one portion of a second sintered connecting layer is applied to the at least one power semiconductor. A portion of an electrical cover contact element is applied to the at least one portion of the second sintered connecting layer.