Double-Faced Power Module Spacer Current Distribution
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Solution Overview
Problem
Existing power modules with double-faced cooling suffer from non-uniform current application to semiconductor chips, which can damage specific chips due to current concentration, and this issue is not effectively addressed for next-generation semiconductors like SiC or GaN.
Innovation Solution
The use of spacers that electrically connect the upper and lower substrates at equal distances from semiconductor chips ensures uniform current distribution by guiding currents through a layered structure of spacers and substrates, preventing concentration on individual chips.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If multiple semiconductor chips are disposed between upper and lower substrates in a double-faced cooling power module, then cooling efficiency is improved and size is reduced, but current uniformity deteriorates causing chip damage
Solution Approach 1:
The patent introduces spacers as intermediary elements between the upper substrate and lower substrate. These spacers serve as current distribution mediators that receive current from the upper substrate and distribute it uniformly to multiple semiconductor chips on the lower substrate, preventing current concentration and improving reliability while maintaining the double-faced cooling structure
Solution Approach 2:
The patent segments the current distribution function by introducing separate spacer elements positioned at specific locations. Instead of direct substrate-to-chip connections, the current path is divided into segments: upper substrate → spacer → semiconductor chip. This segmentation allows independent optimization of current distribution to each chip, ensuring uniformity across all chips
2Power
If Si IGBT chip capacity is increased to solve current uniformity issues, then individual chip performance improves, but the solution cannot be applied to next-generation semiconductors like SiC or GaN
Solution Approach 1:
The patent creates a universal current distribution structure using spacers that can be applied to any semiconductor chip type. The spacer-based current distribution mechanism is material-agnostic and can accommodate Si IGBT, SiC, GaN, or future semiconductor technologies without modification, making the solution universally applicable across different semiconductor generations and material systems
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution achieves uniform current application across semiconductor chips, reducing the risk of damage from current concentration and improving the overall balance of current densities, thereby enhancing the reliability of power modules for next-generation semiconductors.
Implementation Method 1
a first spacer disposed between the upper substrate and the lower substrate, electrically connecting the upper substrate and the lower substrate to each other
Data Source
AI summary
A power module of double-faced cooling includes: an upper substrate; a lower substrate on which a plurality of semiconductor chips are disposed; and a first spacer disposed between the upper substrate and the lower substrate, electrically connecting the upper substrate and the lower substrate to each other, and disposed on the lower substrate to be equally distanced from each of the semiconductor chips. Power is supplied to the semiconductor chips on the lower substrate through the upper substrate and the first spacer.


