Power Module Clip-Heatsink Structure for CTE Stress Buffering

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Solution Overview

Problem

Semiconductor device packages in power modules face challenges such as mismatches in coefficients of thermal expansion (CTE) between different materials, difficulty in assembly, and insufficient thermal dissipation.

Innovation Solution

The semiconductor device package includes a leadframe and a direct bonded metal (DBM) substrate connected to the leadframe. A stress buffer layer is disposed on a clip electrically connected to two semiconductor dies, and a heatsink is positioned on the stress buffer layer. A mold material encapsulates the components, providing thermal and electrical isolation while minimizing CTE mismatches.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If multiple different materials are bonded together within the power module package, then functional requirements are met, but mismatches in coefficients of thermal expansion (CTE) occur between materials

Engineering Contradiction:
Improvefunctional requirementsVSAvoidCTE mismatch
Core Design Contradiction:
Adaptability or versatilityVSReliability

Solution Approach 1:

A stress buffer layer is introduced as an intermediary component between the heatsink and the semiconductor dies. This stress buffer layer acts as a mediator that decouples the thermal expansion differences between the heatsink and the semiconductor components, absorbing stress and preventing damage while allowing both materials to maintain their functional properties.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The stress buffer layer is constructed as a composite structure comprising multiple layers with different material properties. This composite design allows the buffer layer to have intermediate CTE characteristics between the heatsink and semiconductor dies, or to provide mechanical compliance that accommodates CTE mismatches through its layered structure.

Inventive Principle:
Principle #40Composite materials

2Ease of manufacture

If conventional assembly methods are used for power modules, then manufacturing is simple, but assembly difficulty increases and thermal dissipation is insufficient

Engineering Contradiction:
Improveassembly simplicityVSAvoidassembly difficulty
Core Design Contradiction:
Ease of manufactureVSEase of operation

Solution Approach 1:

The stress buffer layer is pre-positioned on the heatsink before the semiconductor dies are mounted. This preliminary action prepares the assembly in advance, creating a stress-absorbing interface that simplifies subsequent assembly steps and prevents damage during the bonding process, thereby reducing overall assembly difficulty.

Inventive Principle:
Principle #10Preliminary action

3Device complexity

If conventional heatsink configurations are used, then structure is simple, but thermal dissipation is insufficient

Engineering Contradiction:
Improvestructure simplicityVSAvoidthermal dissipation
Core Design Contradiction:
Device complexityVSTemperature

Solution Approach 1:

The stress buffer layer is applied locally at the critical interface between the heatsink and semiconductor dies, where thermal and mechanical stresses are most concentrated. This localized intervention provides stress relief and improves thermal contact at the most critical location without requiring complex modifications to the entire heatsink structure.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enhances electrical, mechanical, and thermal reliability by minimizing CTE mismatches and providing efficient thermal dissipation, while also simplifying the assembly process and reducing soldering requirements.

Implementation Method 1

such semiconductor device packages may suffer from mismatches in coefficients of thermal expansion (CTE) between two or more different types of materials bonded to one another within the packages

Methodology Applied
Scientific EffectCoefficient of thermal expansion (CTE) mismatch: Thermal Expansion

Implementation Method 2

a heatsink is disposed on the clip with the stress buffer layer disposed therebetween

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 3

providing efficient thermal dissipation

Methodology Applied
Scientific EffectThermal dissipation: Heat Sink

Implementation Method 4

A mold material encapsulates the first semiconductor die, the second semiconductor die, the clip, and the stress buffer layer

Methodology Applied
Scientific EffectThermal insulation: Thermal Insulation

Implementation Method 5

providing thermal and electrical isolation

Methodology Applied
Scientific EffectElectrical isolation: Electrical Resistance

Data Source

PatentUS12300689B2Dual cool power module with stress buffer layer
Publication Date: 2025.05.13 SEMICON COMPONENTS IND LLC
  • US12300689B2 patent drawing
  • US12300689B2 patent drawing
  • US12300689B2 patent drawing

AI summary

Described implementations provide wireless, surface mounting of at least two semiconductor die on die attach pads (DAPs) of the semiconductor package, where the at least two semiconductor die are electrically connected by a clip. A stress buffer layer may be provided on the clip, and a heatsink may be provided on the stress buffer layer. The heatsink may be secured with an external mold material.