Power Module Thermal Delay Element for Controlled Short-Circuit Failure
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Solution Overview
Problem
Existing power modules in power electronics, particularly in aeronautics, fail to maintain control over semiconductors during short-circuit conditions, leading to uncontrollable degradation and potential destruction of the module.
Innovation Solution
An electronic power module design that incorporates a thermal retardation protrusion with thermal inertia, securely attached to the semiconductor's metallized upper surface via a secondary interconnection joint, allowing the module to transition from a short-circuit to an open-circuit state without violent degradation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If the semiconductor is subjected to high current during short circuit, then the power supply capability is maintained, but the temperature of the metallized surface increases significantly causing uncontrollable degradation
Solution Approach 1:
A thermal retardation protrusion is introduced as an intermediary element between the metallized upper surface of the semiconductor and the external environment. This protrusion acts as a thermal buffer that delays heat transfer, allowing the semiconductor to transition to an open-circuit state without violent degradation while maintaining power supply capability during normal operation
Solution Approach 2:
The thermal retardation protrusion is pre-positioned on the metallized surface before short circuit conditions occur. It provides beforehand cushioning by absorbing and delaying thermal energy transfer, preventing the metallized surface from reaching critical temperatures that would cause uncontrollable degradation during short circuit events
2Reliability
If the semiconductor transitions to short-circuit state, then the current conduction is maintained, but control over the semiconductor is lost
Solution Approach 1:
The thermal retardation protrusion provides preliminary anti-action by opposing the thermal runaway process before it leads to uncontrollable degradation. The protrusion's thermal inertia creates a time delay that allows the semiconductor to transition to an open-circuit state in a controlled manner, preventing loss of control while maintaining reliability
3Power
If the energy dissipation is increased during short circuit, then the short circuit state is sustained, but the power module destruction risk increases
Solution Approach 1:
The thermal retardation protrusion serves as a mediator that decouples the relationship between energy dissipation and module integrity. It allows high energy dissipation during short circuit to be sustained while preventing direct thermal damage to the power module structure, thereby maintaining module integrity despite high power dissipation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The module effectively limits temperature increases on the semiconductor's outer surface, forcing a controlled open-circuit failure mode that prevents damage to other components and ensures module availability.
Implementation Method 1
The thermal connection between the thermal retardation protrusion and the semiconductor via the additional connection joint makes it possible to limit the increase in the temperature of the outer surface of the semiconductor
Data Source
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AI summary
Power electronic module (10) comprising a substrate (11) comprising at least one power circuit (11c), said module (10) comprising at least one main interconnection joint (13) secured to the power circuit (11c) and at least one semiconductor (12) comprising a metallized upper surface (12b) and a lower surface (12a) assembled to the power circuit (11c) via the main interconnection joint (13). The module comprises at least one secondary interconnection joint (17) secured to the metallized upper surface (12b) of the semiconductor (12) and at least one projection (20) provided with a thermal retardation capacity and secured to said metallized upper surface (12b) via the secondary interconnection joint (17).