Power MOS Layout With Angled Body Region for Lower On-Resistance
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Solution Overview
Problem
Conventional power MOS devices face increased on-resistance issues due to the arrangement of body and source doped regions, which affects the efficiency of battery-operated electronic systems by consuming more power.
Innovation Solution
The semiconductor device features a substrate with a gate strip, source doped region, and body doped region, where the body doped region has edges that meet the gate strip at an acute angle and a varying width, reducing overlap with the gate strip to minimize on-resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If the body doped region and source doped region are arranged in conventional configuration, then the device structure is simple, but the on-resistance increases
Solution Approach 1:
The body doped region is designed with asymmetric geometry where the first width (adjacent to gate strip) is smaller than the second width (away from gate strip). This asymmetric configuration reduces the overlap area between the body doped region and gate strip, thereby reducing on-resistance while maintaining manufacturing simplicity
Solution Approach 2:
The patent introduces angular orientation of the body doped region edges relative to the gate strip, creating an acute angle between them. This dimensional change in orientation reduces the projection overlap area without complicating the overall device structure, effectively lowering on-resistance
2Reliability
If the body doped region width is increased to reduce on-resistance, then the on-state current increases, but the overlap with gate strip increases
Solution Approach 1:
By making the body doped region width asymmetric (first width < second width), the design allows the region to extend further away from the gate strip (increasing second width for current conduction) while maintaining a smaller width adjacent to the gate strip (reducing overlap area). This resolves the contradiction between increasing on-state current and minimizing overlap
Solution Approach 2:
The body doped region has different width characteristics at different locations: narrower near the gate strip to minimize overlap and wider away from the gate strip to enhance current conduction. This local variation in geometry optimizes both on-resistance and on-state current simultaneously
Data Source
AI summary
A semiconductor device is provided. The semiconductor device includes a substrate, a gate strip, a source doped region and a body doped region. The substrate has an active region. The gate strip is disposed on the substrate within the active region. The gate strip extends along a first direction. The source doped region is located in the active region and adjacent to a first side of the gate strip along the first direction. The body doped region is located in the active region and adjacent to the first side of the gate strip. The body doped region and the source doped region have opposite conductivity types. The body doped region has a first length along a second direction that is different from the first direction, wherein the first length gradually changes along the first direction.