Power IC Device Integrating Trench Power MOS and CMOS Transistors
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Solution Overview
Problem
Conventional power IC devices face increased manufacturing costs due to separate manufacturing processes for trench power MOS and surface layer channel CMOS transistors, even when formed on the same chip, as there are no common steps in their formation methods.
Innovation Solution
The power IC device and manufacturing method involve forming the source region of the trench power MOS transistor and the gate electrode of the surface layer channel CMOS transistor in the same layer and step, allowing both transistors to share processing steps and reduce the number of manufacturing processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If trench power MOS transistor and surface layer channel CMOS transistor are manufactured using separate manufacturing processes, then each transistor can be optimized for its specific structure and function, but the manufacturing cost increases due to the lack of common processing steps
Solution Approach 1:
The patent merges the manufacturing processes of trench power MOS transistor and surface layer channel CMOS transistor by forming both transistors on the same semiconductor substrate using common processing steps. Specifically, the source region of the trench power MOS transistor and the gate electrode of the CMOS transistor are formed simultaneously in the same manufacturing step, eliminating the need for separate manufacturing processes and reducing overall manufacturing cost while maintaining optimized performance for each transistor type
2Adaptability or versatility
If trench power MOS transistor and surface layer channel CMOS transistor are formed on the same chip using different manufacturing processes, then integration is achieved, but the number of manufacturing processes increases and complexity rises
Solution Approach 1:
The patent applies universality by designing a single manufacturing process that can simultaneously create both trench power MOS transistors and surface layer channel CMOS transistors on the same chip. The process uses common layers and steps - such as forming the source region of the power MOS and gate electrode of the CMOS in the same step - making the manufacturing process multi-functional and capable of producing different transistor types without requiring separate specialized processes
Data Source
AI summary
In a power IC device, a surface layer channel CMOS transistor and a trench power MOS transistor are formed on the same chip. In one embodiment, a source region of the trench power MOS transistor is arranged at the same level as a gate electrode of the surface layer channel CMOS transistor. Thus, the power IC device and a method for manufacturing the power IC device are provided for reducing manufacturing cost in the case of forming the trench power MOS transistor and the surface layer channel CMOS transistor on the same chip.