Integrated Thermoelectric Cooling in Power Packages for Thermal Stress Relief
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Solution Overview
Problem
Thermal cycling and high-temperature operation in semiconductor devices lead to thermomechanical stress, solder joint fatigue, degradation, and performance issues due to inadequate heat dissipation, affecting reliability and lifespan.
Innovation Solution
Integration of a thermoelectric structure within the semiconductor device package, utilizing the Peltier effect to create a temperature difference across the junction, enhancing heat dissipation and reducing thermomechanical stress by transferring heat from the semiconductor die to the submount.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If conventional heat dissipation methods are used in semiconductor devices, then device simplicity is maintained, but heat dissipation efficiency is insufficient leading to thermal stress and reliability issues
Solution Approach 1:
The patent merges the cooling function directly into the semiconductor package by integrating a thermoelectric cooler (TEC) module between the semiconductor die and the substrate. This combination of the semiconductor device and active cooling component into a single integrated package resolves the contradiction by achieving superior heat dissipation while maintaining package compactness and structural unity.
Solution Approach 2:
The thermoelectric cooler acts as an intermediary component between the heat-generating semiconductor die and the heat-dissipating substrate. This mediator actively transports heat from the die to the substrate using Peltier effect, thereby resolving the heat dissipation inefficiency without requiring complex external cooling systems.
2Power
If semiconductor devices operate at high temperatures, then power handling capability is improved, but thermomechanical stress and solder joint fatigue increase reducing reliability
Solution Approach 1:
The thermoelectric cooler provides preliminary cooling action before excessive heat accumulation occurs. By actively removing heat from the semiconductor die during operation, the system prevents thermomechanical stress and solder joint fatigue from developing, thereby maintaining reliability while enabling high power operation.
Solution Approach 2:
The patent changes the thermal parameter of the device by introducing an active cooling mechanism that dynamically controls the temperature of the semiconductor die. This parameter change enables the device to operate at high power levels without suffering from the adverse effects of high temperature, thus resolving the contradiction between power capability and reliability.
3Temperature
If passive heat dissipation structures are used, then device complexity is minimized, but temperature control precision is insufficient affecting performance
Solution Approach 1:
The thermoelectric cooler is controlled to automatically regulate the temperature of the semiconductor die based on its thermal conditions. This self-regulating capability provides precise temperature control without requiring complex external temperature management systems, thereby resolving the contradiction between temperature precision and system complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Improves heat dissipation efficiency, reduces thermomechanical stress, and enhances the reliability and performance of semiconductor devices under high thermal stress conditions.
Implementation Method 1
utilizing the Peltier effect to create a temperature difference across the junction, enhancing heat dissipation and reducing thermomechanical stress by transferring heat from the semiconductor die to the submount
Data Source
AI summary
Semiconductor device packages are provided. In one example, the semiconductor device package includes a housing, a submount, a thermoelectric structure on the submount, at least one semiconductor die on the thermoelectric structure, and at least one connection structure extending from the housing that is coupled to the thermoelectric structure. The thermoelectric structure includes an array of thermoelectric semiconductor structures and is operable to adjust a temperature difference between a first side and a second side of the thermoelectric structure based on a bias voltage applied to the thermoelectric structure.