L-Shaped Power Rail Lead Layout for Dense Semiconductor Interconnects
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Solution Overview
Problem
Existing integrated circuits face challenges in maintaining computing power density while preventing electrical short circuits between interconnects, which can result in insufficient power connections due to reduced contact areas and manufacturing tolerances.
Innovation Solution
A semiconductor structure design with laterally extending interconnects separated by an insulating member, featuring L-shaped leads that connect to source/drain regions, allowing for increased contact area and reduced risk of electrical shorts, while maintaining proximity of source/drain components.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If interconnects are spaced apart to prevent electrical short circuits, then reliability is improved, but computing power density deteriorates
Solution Approach 1:
The lead structure transitions from a simple linear connection to a three-dimensional L-shaped configuration, allowing the lead to extend in multiple directions. This dimensional change enables the lead to contact multiple source/drain regions while maintaining adequate spacing between interconnects, thus preventing shorts while preserving power density.
Solution Approach 2:
The lead is divided into distinct segments: a contact portion that interfaces with source/drain regions and an extension portion that reaches toward the interconnect. This segmentation allows each part to perform its specific function optimally - the contact portion maximizes electrical connection while the extension portion maintains spacing to prevent shorts.
2Productivity
If interconnect size is reduced to increase computing power density, then productivity is improved, but contact area deteriorates
Solution Approach 1:
The lead adopts an L-shape configuration that extends in both longitudinal and lateral dimensions. This allows the lead to achieve sufficient contact area with source/drain regions without requiring larger interconnect footprints, thereby maintaining high computing power density while ensuring adequate electrical connection area.
Solution Approach 2:
The lead structure is nested within the insulating member, with the contact portion positioned to lap over source/drain regions. This nested arrangement maximizes the use of available space, allowing the lead to maintain close proximity to multiple source/drain regions while remaining electrically isolated from adjacent interconnects.
3Reliability
If manufacturing tolerances are tight to ensure proper connections, then reliability is improved, but manufacturing complexity increases
Solution Approach 1:
The lead is designed with an extended length that protrudes toward the interconnect beyond what would be minimally required. This extra length acts as a cushion against manufacturing variations, ensuring that even if positioning tolerances vary, the lead will still reach the interconnect and maintain adequate contact with source/drain regions, thereby reducing sensitivity to manufacturing tolerances.
Data Source
AI summary
A semiconductor structure extends laterally with a first interconnect on one side and a second interconnect on an opposing side separated from the first interconnect by a longitudinal thickness of an insulating member that extends laterally along the first interconnect and the second interconnect. The semiconductor structure includes a first source/drain positioned in the insulating member between the first interconnect and the second interconnect, a second source/drain positioned in the insulating member adjacent to the first source/drain, and a lead electrically connected to the first source/drain and to the second interconnect, wherein a portion of the lead laps the first source/drain and the second source/drain laterally and is electrically insulated from the second source/drain.