Power Semiconductor Assembly With Anisotropic Connecting Layer
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Solution Overview
Problem
Conventional electronic assemblies with power semiconductor components and circuit carriers face challenges in achieving compact arrangements with good thermomechanical properties, as they often suffer from thermomechanical loads and inadequate heat dissipation.
Innovation Solution
The electronic assembly features a power semiconductor component in electrical contact with two circuit carriers via an additively generated connecting layer, which has direction-dependent elasticities, formed from metal sub-layers with gaps, and connected using a solder connection, allowing for improved thermomechanical performance and heat dissipation through a herringbone pattern or other geometries.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the power semiconductor component is arranged between two circuit carriers in a compact configuration, then the assembly achieves better space utilization and compactness, but thermomechanical loads increase due to constrained stress distribution
Solution Approach 1:
The connecting layer is designed with a porous structure containing gaps and voids, allowing it to absorb and distribute thermomechanical stresses while maintaining a compact overall assembly volume. The porous structure provides stress relief pathways without significantly increasing the assembly footprint.
Solution Approach 2:
The connecting layer is formed as a composite structure combining metal powder (copper, aluminum, or their alloys) with binding agents, creating a material that exhibits both mechanical strength and stress-absorbing characteristics. This composite approach enables the layer to handle thermomechanical loads while maintaining compact dimensions.
2Strength
If a rigid connecting layer is used to ensure structural strength, then mechanical stability improves, but heat dissipation capability deteriorates due to restricted thermal pathways
Solution Approach 1:
The porous structure of the connecting layer creates channels and pathways that facilitate heat dissipation while the metal powder content (copper/aluminum) provides high thermal conductivity. The gaps allow thermal energy to dissipate through convection and radiation pathways in addition to conduction.
Solution Approach 2:
The material composition and structural parameters of the connecting layer are optimized to balance strength and heat dissipation. By controlling the metal powder content, particle size distribution, and porosity level, the layer achieves sufficient mechanical strength while maintaining effective thermal management pathways.
3Ease of manufacture
If a homogeneous connecting layer is used to simplify manufacturing, then production complexity reduces, but direction-dependent thermomechanical performance deteriorates
Solution Approach 1:
The connecting layer exhibits spatially varying properties with different effective elastic moduli in different directions, achieved through the anisotropic porous structure and metal powder arrangement. This local quality variation provides direction-dependent stress management while the overall manufacturing process remains relatively simple using additive techniques.
Solution Approach 2:
The additive manufacturing process parameters (layer orientation, deposition angle, sintering conditions) are controlled to create a connecting layer with direction-dependent elastic properties. By varying these parameters during fabrication, the layer achieves optimized stress distribution characteristics in specific directions without requiring complex post-processing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the assembly's ability to absorb and distribute thermomechanical stresses, reducing load on the power semiconductor component and circuit carriers while enabling efficient heat dissipation, resulting in a more robust and compact design.
Implementation Method 1
sub-layers, after application, are selectively melted by a laser beam (or a photon beam). The melted material subsequently solidifies to form a portion of the connecting layer
Implementation Method 2
the connecting layer is connected to the connection region and/or to the contact region by means of a solder connection
Data Source
AI summary
An electronic assembly having a power semiconductor component and a circuit carrier. The power semiconductor component has a contact region on opposite sides; the contact region facing the circuit carrier is in electrical contact with a connection region of the circuit carrier; the power semiconductor component is in electrical contact on the side facing away from the circuit carrier, in the region of the contact region, with a further circuit carrier; an additively generated connecting layer is arranged on the contact region and/or the connection region of the circuit carriers; and the connecting layer is connected to the connection region and/or the contact region using a solder connection. The connecting layer has a lower modulus of elasticity in a direction or plane extending perpendicularly to the surface of the power semiconductor component than in a direction or plane extending in parallel with the surface of the power semiconductor component.