Power Semiconductor Element Installation Conductor Seismic Resistance
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional power semiconductor devices face increased assembly time and efficiency concerns due to the need for resin molding or welding to enhance seismic resistance, which complicates the assembly process.
Innovation Solution
A power semiconductor device with an element installation conductor featuring a first conductor portion, a second conductor portion thinner than the first, and a third conductor portion thinner than the second, made of metal, which improves terminal strength and seismic resistance while maintaining assembly efficiency by integrating the conductor portions and reducing the number of assembly processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the terminal is reinforced by resin molding or potting, then the seismic resistance is improved, but the assembly time increases due to additional inspection processes
Solution Approach 1:
The patent extracts the reinforcement function from separate resin molding or welding processes and integrates it into the terminal structure itself through the integrated conductor design. The conductor portions form a self-reinforcing structure that provides seismic resistance without requiring external reinforcement materials or additional welding operations.
Solution Approach 2:
The patent merges the terminal conductor and reinforcement structure into a single integrated conductor assembly. The first, second, and third conductor portions are electrically connected and structurally integrated to form a unified component that simultaneously provides electrical connection and mechanical reinforcement, eliminating the need for separate reinforcement processes.
2Reliability
If the terminal is connected by TIG welding, then the seismic resistance is improved, but the assembly time increases due to the welding process
Solution Approach 1:
The patent replaces the welding process (thermal/mechanical joining) with an integrated conductor design where electrical connection and mechanical reinforcement are achieved through the conductor structure itself. The integrated conductor portions provide both electrical continuity and mechanical strength without requiring welding operations.
3Reliability
If the terminal is fixed and reinforced by resin molding, then the seismic resistance is improved, but the manufacturing complexity increases due to additional processes
Solution Approach 1:
The patent combines the terminal conductor and reinforcement structure into a single integrated component. The first conductor portion for element installation, the second conductor portion for current transmission, and the third conductor portion for control signals are integrated to form a unified structure that simultaneously provides electrical functionality and mechanical reinforcement.
Solution Approach 2:
The integrated conductor assembly serves multiple functions simultaneously: it provides electrical connection for power transmission, electrical connection for control signals, and mechanical reinforcement for seismic resistance. This multi-functionality eliminates the need for separate reinforcement components and processes.
Data Source
AI summary
An object of the present invention is to provide a power semiconductor device capable of improving seismic resistance while suppressing a decrease in assembly efficiency. According to the present invention, a power semiconductor device 1 includes an element installation conductor 2 including a first conductor portion 20a that is made of metal and is used for installing a power semiconductor element 300, a second conductor portion 20b that is made of metal and forms one or more main terminals 2a for transmitting a current to the power semiconductor element 300, and one or more control terminals 2b for transmitting a switching control signal to the power semiconductor element 300, and a third conductor portion 20c that is made of metal and is provided at a tip portion of the control terminal 2b. In the power semiconductor device 1, the element installation conductor 2 is formed so that the thickness of the thickest portion of the second conductor portion 20b is thinner than the thickness of the first conductor portion 20a, and the thickness of the thickest portion of the third conductor portion 20c is thinner than the thickness of the thinnest portion of the second conductor portion 20b.