Power Semiconductor Module Layout for Thermal and Inductance Control

The patent applies asymmetry by arranging the four semiconductor devices in a non-symmetric linear sequence (positive-side diode, negative-side switching device, positive-side switching device, negative-side diode) rather than a symmetric arrangement. This asymmetric layout positions the high-heat-generating switching devices at opposite ends with diodes in between, reducing thermal interference while maintaining low inductance through optimized current path geometry

The patent transitions from a two-dimensional planar arrangement to a three-dimensional layered structure by stacking multiple insulating substrates vertically. This dimensional change allows switching devices to be positioned at different vertical levels, reducing thermal coupling while maintaining electrical connectivity through conductive patterns on intermediate substrates

The patent extracts the heat-dissipation function from a bulky external cooling structure and integrates it into the module's internal layered architecture. By incorporating heat-dissipative conductive patterns and thermal pathways within the insulating substrates themselves, the design achieves effective heat management without increasing overall module size

The conductive patterns serving as electrical connections also function as heat-dissipation pathways. The insulating substrates provide both electrical isolation and thermal management capabilities. This multi-functionality eliminates the need for separate dedicated cooling structures, reducing module size and cost